Spin Hall angle of rhodium and its effects on magnetic damping of Ni80Fe20 in Rh/Ni80Fe20 bilayer

Mahato, Bipul Kumar; Medwal, Rohit; Baidya, Santu; Kumar, Dheeraj; Piramanayagam, S. N.; Rawat, Rajdeep Singh

doi:10.1016/j.jmmm.2022.169404

Cited by 2 publications

(1 citation statement)

References 48 publications

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“…Other than attractive Pt, Ta, and W, several other 4d and 5d materials were studied. These materials include Ge (θ SH = 0.0011), [107] V (θ SH = 0.071, ρ = 200 μΩ cm), [108] Au (θ SH = 0.0004 and 0.071, ρ = 8 μΩ cm), [109,110] Pd (θ SH = 0.0053, ρ = 21.3 μΩ cm), [111] Mo (θ SH = 0.008 "at low temperature"), [112] Nb (θ SH = 0.001), [113] Hf (θ SH = 0.3, ρ = 154 μΩ cm), [114] Re (θ SH = 0.04, ρ = 102 μΩ cm), [81] U (θ SH = 0.004, ρ = 67 μΩ cm), [115] Rh (θ SH = 0.002), [116] Ru (θ SH =0.0056), [117] Cr (θ SH = 0.007), [117] and Ir (θ SH = 0.02, ρ = 2 μΩ cm). [118] Furthermore, the research trend shifted toward novel engineering/optimization of spin-Hall materials to improve the SHA (and hence reducing the critical current density), while keeping the resistivity values as low as possible.…”

Section: Single Hm Layermentioning

confidence: 99%

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Maddu

Kumar

Bhatti

et al. 2023

Physica Rapid Research Ltrs

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With the advent of the Big Data era, neuromorphic computing (NC) (also known as brain‐inspired computing) has gained a lot of research interest. Spintronic devices are the emerging candidates for implementing the NC due to their intrinsic nonvolatility, extremely high endurance, low‐power consumption, and complementary metal‐oxide compatibility. Many research groups have proposed various NC architectures based on spintronic devices. Herein, a collective survey of different spintronic‐based approaches is given for NC. The reviewed approaches include the progress of stochastic magnetic tunnel junction (MTJ) devices, spin‐torque nano‐oscillator, spin‐Hall nano‐oscillator, domain walls, and skyrmion devices. In all of these approaches, spin–orbit torque (SOT)‐based magnetization control, which is achieved via spintronics heterostructures, plays a significant role. Various heterostructures of heavy metal and ferromagnetic layers that have been proposed are reviewed for generating SOT. In addition, the phenomena and materials involved in the generation of orbital torque are summarized due to the orbital Hall effect (OHE), which has recently gained researchers’ attention. Finally, an outlook on the opportunities and challenges for spintronic‐based NC hardware is provided, shedding light on its great potential for artificial intelligence (AI) applications.

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Section: Single Hm Layermentioning

confidence: 99%

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Maddu

Kumar

Bhatti

et al. 2023

Physica Rapid Research Ltrs

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Epitaxial Fe/Rh bilayers for efficient spin-to-charge conversion

Wiemeler,

Aktas,

Farle

et al. 2024

Applied Physics Letters

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To address the spin pumping in the conventional ferromagnetic/“normal” metal systems, we fabricated 6 nm Fe/1–15 nm Rh epitaxial bilayers and determined the g-factor, magnetic anisotropy, and magnetization damping by combining both 0–40 GHz CPW-based frequency-dependent and cavity-based 9.56 GHz in-plane angular-dependent ferromagnetic resonance measurements at room temperature. Auger electron spectroscopy and low-energy electron diffraction show that Rh grows epitaxially on Fe. The epitaxial bilayers exhibit a high spin mixing conductance gmix↑↓=(2.9±0.2)×1019 m−2 and a spin diffusion length in Rhodium λsd=9.0±1.3 nm. This makes Rh comparable to Pt and Pd in terms of spin pumping and spin transport efficiency at room temperature.

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Spin Hall angle of rhodium and its effects on magnetic damping of Ni80Fe20 in Rh/Ni80Fe20 bilayer

Cited by 2 publications

References 48 publications

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Spintronic Heterostructures for Artificial Intelligence: A Materials Perspective

Epitaxial Fe/Rh bilayers for efficient spin-to-charge conversion

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