Spin Hall magnetoresistance in Pt/(Ga,Mn)N devices

Abstract

Diluted magnetic semiconductors have attracted significant attention for their potential in spintronic applications. Particularly, magnetically doped GaN is highly attractive due to its high relevance for the CMOS industry and the possibility of developing advanced spintronic devices, which are fully compatible with the current industrial procedures. Despite this interest, there remains a need to investigate the spintronic parameters that characterize interfaces within these systems. Here, we perform spin Hall magnetoresistance (SMR) measurements to evaluate the spin transfer at a Pt/(Ga,Mn)N interface. We determine the transparency of the interface through the estimation of the real part of the spin mixing conductance, finding Gr = 2.6 × 1014 Ω−1 m−2, comparable to state-of-the-art yttrium iron garnet/Pt interfaces. Moreover, the magnetic ordering probed by SMR above the (Ga,Mn)N Curie temperature TC provides a broader temperature range for the efficient generation and detection of spin currents, relaxing the conditions for this material to be applied in spintronic devices.