Spin homojunction with high interfacial transparency for efficient spin-charge conversion

Han, Lin‐Hai; Wang, Yuyan; Zhu, Wenxuan; Zhao, Runni; Chen, Xianzhe; Su, Rongxuan; Zhou, Yongjian; Bai, Hua; Wang, Qian; You, Yunfeng; Chen, Chong; Yan, Sen; Chen, Tongjin; Wen, Yongzheng; Song, Cheng; Pan, Feng

doi:10.1126/sciadv.abq2742

Cited by 10 publications

(4 citation statements)

References 65 publications

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“…Moreover, FeRh is a particularly interesting system that displays a collinear antiferromagnetic phase without inversion symmetry breaking. Thus, a 15 nm FeRh thin film 29 is used as a control sample for Mn 2 Au, and a very weak THz signal from FeRh is observed, which is 50 times weaker than that of the Mn 2 Au single layer (inset of Fig. 3a ).…”

Section: Resultsmentioning

confidence: 99%

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation

Huang,

Liao,

Qiu

et al. 2024

Nat Commun

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Néel spin-orbit torque allows a charge current pulse to efficiently manipulate the Néel vector in antiferromagnets, which offers a unique opportunity for ultrahigh density information storage with high speed. However, the reciprocal process of Néel spin-orbit torque, the generation of ultrafast charge current in antiferromagnets has not been demonstrated. Here, we show the experimental observation of charge current generation in antiferromagnetic metallic Mn2Au thin films using ultrafast optical excitation. The ultrafast laser pulse excites antiferromagnetic magnons, resulting in instantaneous non-equilibrium spin polarization at the antiferromagnetic spin sublattices with broken spatial symmetry. Then the charge current is generated directly via spin-orbit fields at the two sublattices, which is termed as the reciprocal phenomenon of Néel spin-orbit torque, and the associated THz emission can be detected at room temperature. Besides the fundamental significance on the Onsager reciprocity, the observed magnonic charge current generation in antiferromagnet would advance the development of antiferromagnetic THz emitter.

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Section: Resultsmentioning

confidence: 99%

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation

Huang,

Liao,

Qiu

et al. 2024

Nat Commun

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“…According to the principle of AMR rectification, h x and h z are estimated as 0.15 Oe and 0.78 Oe, respectively (Figure S7, Supporting Information). [52,53] The voltage components contributed by them both appear in V s (Figure 2c), but V z dominates (the blue line). The compensation of V x and V z leads the voltage data (the black circle) to be suppressed from 180°to 360°due to their opposite sign, in contrast to the same sign of V x and V z and the resultant superposition from 0°to 180°.…”

Section: Characterization Of the Effective Fields In Saw-driven Fmrmentioning

confidence: 99%

Direct‐Current Electrical Detection of Surface‐Acoustic‐Wave‐Driven Ferromagnetic Resonance

et al. 2023

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Surface acoustic waves (SAW) provide a promising platform to study spin‐phonon coupling, which can be achieved by SAW‐driven ferromagnetic resonance (FMR) for efficient acoustic manipulation of spin. Although the magneto‐elastic effective field model has achieved great success in describing SAW‐driven FMR, the magnitude of the effective field acting on the magnetization induced by SAW still remains hard to access. Here, by integrating ferromagnetic stripes with SAW devices, direct‐current detection for SAW‐driven FMR based on electrical rectification is reported. By analyzing FMR rectified voltage, the effective fields are straightforwardly characterized and extracted, which exhibits the advantages of better integration compatibility and lower cost than traditional methods such as vector‐network analyzer‐based techniques. A large nonreciprocal rectified voltage is obtained, which is attributed to the coexistence of in‐plane and out‐of‐plane effective fields. The effective fields can be modulated by controlling the longitudinal and shear strains within the films to achieve almost 100% nonreciprocity ratio, demonstrating the potential for electrical switches. Besides its fundamental significance, this finding provides a unique opportunity for a designable spin acousto‐electronic device and its convenient signal readout.

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“…[ 3 , 4 ] Among various TIs, bismuth antimony trichalcogenides (Bi,Sb) 2 Ch 3 ( Ch = S, Se, and Te) and their derivatives have emerged as the most promising material platform due to their large bulk gap of ≈0.3 eV, a simple TSS having a single Dirac cone with helical spin texture, and van der Waals (vdW) layered structure, which are favorable for suppressing the bulk contribution, enhancing charge‐to‐spin conversion, and realizing atomically clean interface for high spin transparency, respectively. [ 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ] Various types of ferromagnet (FM) layers have been deposited on top of the (Bi,Sb) 2 Ch 3 ‐type TI layers for the SOT devices, demonstrating more efficient SOT operation compared to the HM/FM devices. [ 16 , 17 , 18 , 19 , 20 ] However, all‐vdW TI/FM heterostructure devices, in which strong charge‐to‐spin conversion and high interfacial spin transparency can be achieved simultaneously at room temperature, have rarely been studied, partly due to the lack of suitable vdW FMs.…”

Section: Introductionmentioning

confidence: 99%

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

Choi,

Park,

et al. 2024

Advanced Science

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All‐Van der Waals (vdW)‐material‐based heterostructures with atomically sharp interfaces offer a versatile platform for high‐performing spintronic functionalities at room temperature. One of the key components is vdW topological insulators (TIs), which can produce a strong spin‐orbit‐torque (SOT) through the spin‐momentum locking of their topological surface state (TSS). However, the relatively low conductance of the TSS introduces a current leakage problem through the bulk states of the TI or the adjacent ferromagnetic metal layers, reducing the interfacial charge‐to‐spin conversion efficiency (qICS). Here, a vdW heterostructure is used consisting of atomically‐thin layers of a bulk‐insulating TI Sn‐doped Bi1.1Sb0.9Te2S1 and a room‐temperature ferromagnet Fe3GaTe2, to enhance the relative current ratio on the TSS up to ≈20%. The resulting qICS reaches ≈1.65 nm−1 and the critical current density Jc ≈0.9 × 106 Acm−2 at 300 K, surpassing the performance of TI‐based and heavy‐metal‐based SOT devices. These findings demonstrate that an all‐vdW heterostructure with thickness optimization offers a promising platform for efficient current‐controlled magnetization switching at room temperature.

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Spin homojunction with high interfacial transparency for efficient spin-charge conversion

Cited by 10 publications

References 65 publications

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation

Antiferromagnetic magnonic charge current generation via ultrafast optical excitation

Direct‐Current Electrical Detection of Surface‐Acoustic‐Wave‐Driven Ferromagnetic Resonance

Highly Efficient Room‐Temperature Spin‐Orbit‐Torque Switching in a Van der Waals Heterostructure of Topological Insulator and Ferromagnet

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