Spin-injection device based on EuS magnetic tunnel barriers

Filip, AT; LeClair, P.; Smits, Cjp Coen; Swagten, Hjm Henk; Koopmans, B.; Jonge, de Wjm Wim

doi:10.1063/1.1503406

Cited by 51 publications

(48 citation statements)

References 25 publications

(20 reference statements)

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“…A quantitative understanding of MTJ's faces challenges similar to those discussed for F/I/S tunneling, including determining precisely which spin polarization is relevant and the related issue of reconciling the (typically positive) sign of the observed TMR with the electronic structure (Bratkovsky, 1997;MacLaren et al, 1997;Mathon and Umerski, 1997;Tsymbal and Pettifor, 1997;Oleinik et al, 2000;LeClair et al, 2002).…”

Section: F/i/f Tunnelingmentioning

confidence: 99%

“…(31), a spin-selective resistive contact r c ӷr F ,r N (such as a tunnel or Schottky contact) would contribute to effective spin injection with P j ϷP ⌺ being dominated by the effect r c and not the ratio r F /r N . 46 This limit is also instructive to illustrate the principle of spin filtering (Esaki et al, 1967;Moodera et al, 1988;Hao et al, 1990;Filip et al, 2002). In a spindiscriminating transport process the resulting degree of spin polarization is changed.…”

Section: F/n Junctionmentioning

confidence: 99%

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Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: F/i/f Tunnelingmentioning

confidence: 99%

Section: F/n Junctionmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…They are characterized by several unique electronic and magnetic properties, because of which they attract continuous interest for academic research as well as for device applications. EuX have been suggested for applications in spin-filter devices based on EuO, [39][40][41][42][43] EuS [44][45][46][47][48][49][50] or EuSe 51 tunnel junctions. These tunnel junctions provide spinpolarized electrons due to different barrier heights for electrons with opposite spin orientations.…”

Section: Properties Of Europium Chalcogenidesmentioning

confidence: 99%

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

et al. 2010

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The magnetic europium chalcogenide semiconductors EuTe and EuSe are investigated by the spectroscopy of second harmonic generation ͑SHG͒ in the vicinity of the optical band gap formed by transitions involving the 4f and 5d electronic orbitals of the magnetic Eu 2+ ions. In these materials with centrosymmetric crystal lattice the electric-dipole SHG process is symmetry forbidden so that no signal is observed in zero magnetic field. Signal appears, however, in applied magnetic field with the SHG intensity being proportional to the square of magnetization. The magnetic field and temperature dependencies of the induced SHG allow us to introduce a type of nonlinear optical susceptibility determined by the magnetic-dipole contribution in combination with a spontaneous or induced magnetization. The experimental results can be described qualitatively by a phenomenological model based on a symmetry analysis and are in good quantitative agreement with microscopic model calculations accounting for details of the electronic energy and spin structure.

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“…For example, ErAs has been used to study magneto-transport [51] and resonant tunneling [176]; EuS has been used in hybrid spin fi lter devices [177,178]. These materials are of special interest for using as barriers in magnetic tunnel junctions [179].…”

Section: Enhancement Of the Transition Temperatures And Potential Devmentioning

confidence: 99%

Electronic, Magnetic and Transport Properties of Rare‐Earth Monopnictides

Duan¹,

Sabirianov²,

Mei³

et al. 2007

ChemInform

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The electronic structures and magnetic properties of many rare-earth monopnictides are reviewed in this article. Possible candidate materials for spintronics devices from the rare-earth monopnictide family, i.e. high polarization (nominally half-metallic) ferromagnets and antiferromagnets, are identifi ed. We attempt to provide a unifi ed picture of the electronic properties of these strongly correlated systems. The relative merits of several ab initio theoretical methods, useful in the study of the rare-earth monopnictides, are discussed. We present our current understanding of the possible half-metallicity, semiconductor-metal transitions, and magnetic orderings in the rare-earth monopnictides. Finally, we propose some potential strategies to improve the magnetic and electronic properties of these candidate materials for spintronics devices.

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Spin-injection device based on EuS magnetic tunnel barriers

Cited by 51 publications

References 25 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Optical second harmonic generation in the centrosymmetric magnetic semiconductors EuTe and EuSe

Electronic, Magnetic and Transport Properties of Rare‐Earth Monopnictides

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