We first derive the energy dispersion of bilayer MoS 2 in the presence of a perpendicular electric field E z . We show that the band gap and layer splitting can be controlled by the field E z . Away from the k point, the intrinsic SOC splitting increases in the conduction band but is weakly affected in the valence band. We then analyze the band structure in the presence of a perpendicular magnetic field B and the field E z , including spin and valley Zeeman terms, and evaluate the Hall and longitudinal conductivities. We discuss the numerical results as functions of the fields B and E z for finite temperatures. The field B gives rise to a significant spin splitting in the conduction band, to a beating in the Shubnikov-de Haas (SdH) oscillations when it's weak, and to their splitting when it's strong. The Zeeman terms and E z suppress the beating and change the positions of the beating nodes of the SdH oscillations at low B fields and enhance their splitting at high B fields. Similar beating patterns are observed in the spin and valley polarizations at low B fields. Interestingly, a 90% spin polarization and a 100% square-wave-shaped valley polarization are observed at high B fields. The Hall-plateau sequence depends on E z . These findings may be pertinent to future spintronic and valleytronic devices.Recently the MoS 2 monolayer has provided a new testbed for the study of fermion physics in reduced dimensions. Its strong intrinsic SOC and huge band gap 1 , approximately 2λ = 150 meV and 2∆ = 1.66 eV, respectively, render it pertinent to potential applications in spintronics and optoelectronics 2-5 . Due to these features, MoS 2 may be more appropriate for device applications than graphene and the conventional two-dimensional electron gas (2DEG). Other investigated properties of monlayer MoS 2 are magnetocapacitance 6 , spinand valley-dependent magnetooptical spectra 7-9 and an unconventional quantum Hall effect (QHE) 10 . Most recently, magnetotransport studies of monolayer MoS 2 have been carried out [11][12][13] .In addition to monolayer MoS 2 , it has been recently realized that bilayer MoS 2 has potential applications in optoelectronics and spintronics. Also, a band-gap tuning is possible in a MoS 2 bilayer in the presence of a perpendicular electric field E z 14-16 . Additional reported properties of bilayer MoS 2 include magnetoelectric effects and valley-controlled spin-quantum gates 17 , tuning of the valley magnetic moment 18 , and electrical control of the valley-Hall effect 19 . Moreover, a field-effect transistor has been realized experimentally in a few-layer MoS 2 20 . In contrast, bilayer graphene has intrinsically a very weak SOC 21,22 and, when not biased, a zero band gap 23-25 . There exist numerous theoretical and experimental 24,26-29 studies of magnetotransport properties in bilayer graphene. Although its band gap can be controlled by an electric field E z 30-33 , high-quality samples of MoS 2 bilayers with a strong intrinsic SOC and a huge band gap are of particular importance. Contrary to ...