Spin Noise Spectroscopy in GaAs (110) Quantum Wells: Access to Intrinsic Spin Lifetimes and Equilibrium Electron Dynamics

Müller, G.; Römer, Michael; Schuh, Dieter; Wegscheider, Werner; Hübner, Jens; Oestreich, M.

doi:10.1103/physrevlett.101.206601

Cited by 123 publications

(179 citation statements)

References 19 publications

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“…The spin dephasing in (110)-grown QWs and 2DES was studied experimentally by several groups [17][18][19][20][21][22]. Due to the suppression of the DP mechanism, other spin dephasing mechanisms can be studied, yet the measurement of the lifetimes by optical techniques remains challenging due to spin dephasing induced via optically generated holes.…”

Section: Introductionmentioning

confidence: 99%

Spin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

et al. 2014

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We study the optically induced spin polarization, spin dephasing, and diffusion in several high-mobility twodimensional electron systems, which are embedded in GaAs quantum wells grown on (110)-oriented substrates. The experimental techniques comprise a two-beam magneto-optical spectroscopy system and polarizationresolved photoluminescence. Under weak excitation conditions at liquid-helium temperatures, we observe spin lifetimes above 100 ns in one of our samples, which are reduced with increasing excitation density due to additional, hole-mediated, spin dephasing. The spin dynamic is strongly influenced by the carrier density and the ionization of remote donors, which can be controlled by temperature and above-barrier illumination. The absolute value of the average electron spin polarization in the samples is directly observable in the circular polarization of photoluminescence collected under circularly polarized excitation and reaches values of about 5%. Spin diffusion is studied by varying the distance between pump and probe beams in microspectroscopy experiments. We observe diffusion lengths above 100 μm and, at high excitation intensity, a nonmonotonic dependence of the spin polarization on the pump-probe distance.

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Section: Introductionmentioning

confidence: 99%

Spin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

et al. 2014

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“…12 Therefore for spins along the growth direction the DP relaxation mechanism is absent and other relaxation mechanisms should be taken into account. [13][14][15][16][17][18][19][20] For (111) III-V zinc-blende quantum wells, the spin relaxation may also show rich properties, due to the interplay of the Rashba and Dresselhaus terms. Setting theẑ-axis along the growth direction [111],x-axis along [110] andŷ-axis along [112], the DP term for the lowest subband can be expressed as…”

Section: Introductionmentioning

confidence: 99%

Spin relaxation in n-type (111) GaAs quantum wells

Sun

Zhang

2010

Journal of Applied Physics

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We investigate the spin relaxation limited by the D'yakonov-Perel' mechanism in n-type (111) GaAs quantum wells, by means of the kinetic spin Bloch equation approach. In (111) GaAs quantum wells, the in-plane effective magnetic field from the D'yakonov-Perel' term can be suppressed to zero on a special momentum circle under the proper gate voltage, by the cancellation between the Dresselhaus and Rashba spin-orbit coupling terms. When the spin-polarized electrons mainly distribute around this special circle, the in-plane inhomogeneous broadening is small and the spin relaxation can be suppressed, especially for that along the growth direction of quantum well. This cancellation effect may cause a peak (the cancellation peak) in the density or temperature dependence of the spin relaxation time. In the density (temperature) dependence, the interplay between the cancellation peak and the ordinary density (Coulomb) peak leads to rich features of the density (temperature) dependence of the spin relaxation time. The effect of impurities, with its different weights on the cancellation peak and the Coulomb peak in the temperature dependence of the spin relaxation, is revealed. We also show the anisotropy of the spin relaxation with respect to the spin-polarization direction.

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“…4,5 All the above experiments are based on different kinds of setups with significant perturbations of the QD system. In this letter, we demonstrate spin noise spectroscopy (SNS) as an alternative low perturbation and in principle quantum mechanical non-demolition experiment [6][7][8] to study the interaction of localized heavy-holes with the surrounding nuclear spin bath in dependence on external longitudinal and transverse magnetic fields. Spin noise spectroscopy has been used on QD ensembles once before, however, mainly to study the anisotropy of the heavy-hole g-factor.…”

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confidence: 99%

Measurement of heavy-hole spin dephasing in (InGa)As quantum dots

et al. 2012

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We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time {\tau}_{fast}^{hh} of 27 ns and a second, long spin relaxation time {\tau}_{slow}^{hh} which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization.Comment: accepted to be published in AP

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Spin Noise Spectroscopy in GaAs (110) Quantum Wells: Access to Intrinsic Spin Lifetimes and Equilibrium Electron Dynamics

Cited by 123 publications

References 19 publications

Spin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

Spin polarization, dephasing, and photoinduced spin diffusion in (110)-grown two-dimensional electron systems

Spin relaxation in n-type (111) GaAs quantum wells

Measurement of heavy-hole spin dephasing in (InGa)As quantum dots

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