Spin-on dielectric stack low-k integration with EB curing technology for 45nm-node and beyond

Nagai, Hiroyuki; Maekawa, Kaoru; Iwashita, Mitsuaki; Muramatsu, Makoto; Kubota, Koji; Hinata, K.; Kokubo, Tetsuro; Shiota, Atsushi; Hattori, Masa Aki; Nagano, Hosei; Tokushige, Katsuhiko; Kodera, Masahito; Mishima, Kiyotaka

doi:10.1109/iitc.2004.1345721

Cited by 5 publications

(5 citation statements)

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“…Measurement of residual stresses in Cu wiring.-The residual stresses of Cu wiring with the Cu/LKD structures were detected by X-ray diffraction ͑XRD͒. 11 Two Cu/LKD samples of the same type as those evaluated in previous reports 5 were measured. One consisted of a stacked structure of 100 nm thick dense low-k film ͑LKD2040͒ and 200 nm thick porous low-k film ͑LKD5117͒, and the other consisted of a single layer of 300 nm thick dense low-k film ͑LKD2040͒.…”

Section: Methodsmentioning

confidence: 99%

“…Additionally, some of the defects induced during CMP had been previously unreported. Nagai et al 5 reported that a porous low-k film ͓modulus = 7.0 Gpa; LKD5117; the LKD series consists of spin-on ͑MSQ͒ films from the JSR Corporation͔ stacked with a dense low-k film ͑15 GPa; LKD2040͒ showed pronounced cracking in its Cu wiring that might have been related to interlayer dielectric ͑ILD͒ mechanical strength. They also reported that cracking decreased with another stacked structure of a porous low-k film having a higher Young's modulus, coupled with modification to the ashing process.…”

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confidence: 99%

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Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Kodera¹,

Uekusa²,

Nagano³

et al. 2005

J. Electrochem. Soc.

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Porous low-k materials are required in the construction of 45 nm node large-scale integrated devices. However, the extremely low Young's modulus values of these materials results in a high number of previously unreported defects. A porous low-k film stacked with a dense low-k film showed pronounced cracking in its Cu wiring, which was concentrated in isolated lines 0.18 m in width and was accelerated with longer chemical-mechanical polishing ͑CMP͒ times. Denser lines showed less cracking and the single structure of a dense low-k film showed no cracking. We hypothesized that this cracking might be categorized as stress corrosion cracking ͑SCC͒. Accordingly, we investigated the relation between stress and corrosion in certain kinds of slurry. We have also researched the effects on corrosion of temperature and various metals. In all of the slurry that we tested, tensile stress increased corrosion current in Cu samples. Furthermore, both finite element method analysis of stress during CMP and measurements of friction on the Cu/low-k surface by scanning probe microscopy indicated concentration of stress on low-k materials, especially at the edges of isolated wiring. Thus, we concluded that stress enhances corrosion during CMP and that there was a high possibility of SCC.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Kodera¹,

Uekusa²,

Nagano³

et al. 2005

J. Electrochem. Soc.

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“…Moreover, porous low-k materials are required for the construction of advanced 65-nm-node and 45-nmnode LSI devices. 1) However, the extremely low Young's modulus values of these materials result in a significant number of defects, 2,3) thus preventing the use of these materials in the construction of LSI devices. Some defects induced in chemical mechanical planarization (CMP) with a Cu/porous low-k structure have not been previously reported.…”

Section: Introductionmentioning

confidence: 99%

Stress Analyses during Chemical Mechanical Planarization Processing with Cu/Porous Low-k Structures of LSI Devices

Kodera¹,

Fukuda

Mochizuki

et al. 2005

Jpn. J. Appl. Phys.

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A scintillation counter telescope of aperture 0.47 m2 sr and incorporating layers of crossed neon flash tubes has been used to search for relativistic ei3 and 2e/3 quarks in the near-vertical cosmic radiation at sea level. Events were selected where the scintillator pulse heights were as expected for quarks and the corresponding flash tube records were studied.No events satisfied all the rigorous acceptance criteria and only upper limits can be given for the quark flux. These are, at the 90% confidence limits: < 1.15 x l 0 -l 0 c m -2 s -I s r -l for relativistic e/3 quarks and < 8.0 x c m -z s-I s r -l for relativistic 2e/3 quarks.

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“…However, the poor mechanical strength of low-k materials causes various defects, such as low-k delamination and damage to Cu interconnects, due to stress during chemical mechanical polishing (CMP) in the interconnect formation process. 1,2) It has been reported that the use of a low polishing pressure in the CMP process is effective for reducing these defects. 3) A number of approaches to low-downforce planarization have been studied.…”

Section: Introductionmentioning

confidence: 99%

Removal Rate Simulation of Dissolution-Type Electrochemical Mechanical Polishing

Fukuda

Kodera

Toma

et al. 2010

Jpn. J. Appl. Phys.

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A new method for simulating the Cu removal rate in electrochemical mechanical polishing (ECMP) based on the dissolution-type polishing mechanism was developed. The effect of a protective layer on the Cu removal rate was considered in this method because the protective layer is a key element in the dissolution-type polishing mechanism. This method was used to simulate the removal rate in a rotary-type ECMP system. The simulations accurately provided the dependence of the Cu removal rate on the aperture ratio. Furthermore, the dependence of the Cu removal rate on the aperture ratio was described with respect to changes in the average protective layer amount with time. Regarding the dependence of the Cu removal rate on the aperture diameter, however, a discrepancy was observed between the simulation and experimental results because this method did not take into account the effect of the aperture diameter on the electrolyte-filling ratio in apertures.

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Spin-on dielectric stack low-k integration with EB curing technology for 45nm-node and beyond

Cited by 5 publications

References 0 publications

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Stress Corrosion Cracking of Cu Interconnects during CMP with a Cu/Porous Low-k Structure

Stress Analyses during Chemical Mechanical Planarization Processing with Cu/Porous Low-k Structures of LSI Devices

Removal Rate Simulation of Dissolution-Type Electrochemical Mechanical Polishing

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