For spintronics applications, generation of significant spin transport is required, which is achieved by applying a semiconductor surface exhibiting metallic spin-split surface-state bands. We show that metallic spin-split surface-state bands are achieved on hydrogenated ZnO (101¯0) surface by using first-principles density-functional theory calculations. We find that these metallic surface-state bands with dominant Zn-s and p orbitals exhibit Rashba spin splitting with a strong anisotropic character. This finding makes spintronics devices using oxide electronics surface materials possible.