“…Therefore, the linear and nonlinear optical absorption in low-dimensional semiconductor structures have been studied by many researchers in recent years [1][2][3][4][5][6][7][8][9][10][11]. The effects of applied electric and magnetic fields on the linear and nonlinear optical absorption coefficients have been theoretically investigated in a large number of papers, such as: GaAs-Ga 1Àx Al x As asymmetric double quantum wells [1,2], in V-shaped quantum well [3], in double semi-parabolic quantum wells [4,5], in a disk-shaped quantum dot with parabolic potential plus an inverse squared potential [6], in Ga 1Àx In x N y As 1Ày =GaAs double quantum wells [7], in a two-dimensional quantum dot [8], in a parabolically confinement wire in the presence of Rashba spin orbit interaction [9], in double semi-graded quantum wells [10], and in modulation-doped quantum wells [11]. The linear and nonlinear optical properties in a spherical nanolayer quantum system subjected to a uniform applied electric field directed with respect to the z-axis have been theoretically investigated within the compact-density matrix formalism and the iterative method by Chen and Xie [12].…”