1998
DOI: 10.1088/0268-1242/13/4/005
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Spin-orbit splitting and weak antilocalization in an asymmetric /InP quantum well

Abstract: Low-magnetic-field magnetoresistance of a two-dimensional electron gas (2DEG) in a triangular quantum well at a single In 0.53 Ga 0.47 As-InP heterointerface has been studied. It was shown that the spin-orbit relaxation plays a significant role in the low-field magnetoresistivity in a wide range of 2DEG densities (1.8-5.5) × 10 11 cm −2 . Analysis shows that both cubic and linear terms in the wavevector must be taken into account in spin splitting to describe experimental results. The linear term is mainly rel… Show more

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Cited by 9 publications
(10 citation statements)
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“…Experimental methods to determine the spin-orbit coupling coefficients consist of magnetotransport (including both the Shubnikov-de Haas oscillation [158][159][160][161][162][163][164][165][166][167][168] and weak (anti-)localization [137,[169][170][171][172][173][174][175][176]), optically probed spin dynamics (spin relaxation [177][178][179] and spin precession [60]), electron spin resonance [180] and spin-flip Raman scattering [133,181], etc. Recently, it was proposed that the radiation-induced oscillatory magnetoresistance can be used as a sensitive probe of the zero-field spin-splitting [182].…”
Section: Electron Spin-orbit Coupling In Nanostructuresmentioning
confidence: 99%
“…Experimental methods to determine the spin-orbit coupling coefficients consist of magnetotransport (including both the Shubnikov-de Haas oscillation [158][159][160][161][162][163][164][165][166][167][168] and weak (anti-)localization [137,[169][170][171][172][173][174][175][176]), optically probed spin dynamics (spin relaxation [177][178][179] and spin precession [60]), electron spin resonance [180] and spin-flip Raman scattering [133,181], etc. Recently, it was proposed that the radiation-induced oscillatory magnetoresistance can be used as a sensitive probe of the zero-field spin-splitting [182].…”
Section: Electron Spin-orbit Coupling In Nanostructuresmentioning
confidence: 99%
“…Specifically, it was found that even in symmetric quantum wells, the built-in electric field contributes an intersubband Rashba spin-orbit coupling, though it does not contribute to the intrasubband spinorbit coupling [120,121]. Experimental methods to determine the spin-orbit coupling coefficients consist of magnetotransport (including both the Shubnikov-de Haas oscillation [158][159][160][161][162][163][164][165][166][167][168] and weak (anti-)localization [137,[169][170][171][172][173][174][175][176]), optically probed spin dynamics (spin relaxation [177][178][179] and spin precession [60]), electron spin resonance [180] and spin-flip Raman scattering [133,181], etc. Recently, it was proposed that the radiation-induced oscillatory magnetoresistance can be used as a sensitive probe of the zero-field spin-splitting [182].…”
Section: Electron Spin-orbit Coupling In Nanostructuresmentioning
confidence: 99%
“…7. The effects of structure inversion asymmetry, heterointerface and gate-voltage on the Dresselhaus and Rashba spin-orbit couplings in quantum wells were studied experimentally in Refs [37,55,137,162,175,178,179,183,192,193]…”
mentioning
confidence: 99%
“…Therefore, a so-called antilocalization maximum in the magnetoresistance or a minimum in the magnetoconductivity with increasing magnetic fields was predicted [9]. For a 2D electron gas (2DEG) an antilocalization maximum in the magnetoresistance was experimentally observed in GaAs-based heterostructures [6,10] but subsequent experiments demonstrated that the influence of the SO scattering is much more pronounced in In 0.53 Ga 0.47 As/InP heterostructures [7,11]. These latter studies on asymmetric quantum wells in In 0.53 Ga 0.47 As/InP heterostructures enabled the main physical mechanisms for SO relaxation in the 2DEG to be studied [7,11,12].…”
mentioning
confidence: 99%
“…For a 2D electron gas (2DEG) an antilocalization maximum in the magnetoresistance was experimentally observed in GaAs-based heterostructures [6,10] but subsequent experiments demonstrated that the influence of the SO scattering is much more pronounced in In 0.53 Ga 0.47 As/InP heterostructures [7,11]. These latter studies on asymmetric quantum wells in In 0.53 Ga 0.47 As/InP heterostructures enabled the main physical mechanisms for SO relaxation in the 2DEG to be studied [7,11,12]. The goal of this paper is to clarify the contribution of electrons in the second subband to the spin and phase decoherence of electrons in an asymmetric quantum well.…”
mentioning
confidence: 99%