Spin–orbit splitting-dependent quadratic electro-optic effect in InGaN/GaN quantum wells

Abstract

Taking account of the contribution of spin-orbit splitting, the energy band of GaN/InGaN quantum wells (QWs) has been calculated. For the quadratic electro-optic effect (QEOE), the resonant third-order nonlinear optical susceptibility due to the interband transition of the mode, whose polarization is parallel to the [0 0 1] direction of the QWs, has been analysed as a function of the well width and the concentration of In.

Size-dependent interband three-photon absorption properties of spherical CdTe quantum dots

“…With the approximation of effective mass, the wavefunction near the point in Brillouin zone can be represented in terms of the product of the periodic Bloch functions at k = 0 and envelope functions as follows [17,19]:…”

Strain-induced low dimensional confinement structures

“…Also, our chosen materials are semiconductors widely used in different studies with well known bulk properties and characteristics. The envelope function method (EFM) based on the 8x8 Luttinger-Kohn Hamiltonian including χ [9,10] is an adequate method to study this kind of systems. VB is decoupled from CB and the spin orbit coupling is neglected since it is large enough in all our materials.…”