Spin–orbit torque-induced memristor in Ta/GdFeCo/Ta structures for neuromorphic computing

Neuromorphic Computing with Emerging Antiferromagnetic Ordering in Spin–Orbit Torque Devices

“…In sample NiO-15 nm, LTD and LTP correspond to consecutive negative and positive current pulses, respectively. The mechanism underlying this phenomenon is likely the nucleation and growth of domains within the Hall bar device, as reported previously. , Note that in NiO-based devices, the gradual response of R Hall versus pulse number (both increasing and decreasing) indicates synaptic behavior that can be applied to NC. ,,− …”

“…In addition to the switching induced by current-driven SOT, we observed an analog change in the magnetization of the Co layer when the devices were exposed to a pulsed electric current, as shown in Figure . This trait could potentially be used as a synapse ,,− ,,− for information transmission in high-efficiency NC applications. Figure illustrates the neuromorphic characteristics of NiO-based SOT devices under an applied pulse current.…”

“… 28 , 56 Note that in NiO-based devices, the gradual response of R Hall versus pulse number (both increasing and decreasing) indicates synaptic behavior that can be applied to NC. 11 , 34 , 52 − 55 …”