Spin orientation at semiconductor heterointerfaces

Jusserand, B.; Richards, David; Allan, G.; Priester, C.; Etienne, B.

doi:10.1103/physrevb.51.4707

Cited by 195 publications

(183 citation statements)

References 20 publications

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“…In a [001] oriented QW the linear term has the components (h x D (k), h y D (k)) = (α Dkx , −α Dky ). For heterostructures with a typical ∼10nm confinement in z-direction, the linear part of h D is usually larger than the cubic part, except the case of high doping concentration [11]. The Rashba term is not zero only in heterostructures with asymmetry in their growth direction.…”

Section: Path Integrals For the Spin Evolutionmentioning

confidence: 99%

Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling

2004

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We performed path integral simulations of spin evolution controlled by the Rashba spin-orbit interaction in the semiclassical regime for chaotic and regular quantum dots. The spin polarization dynamics have been found to be strikingly different from the D'yakonov-Perel' (DP) spin relaxation in bulk systems. Also an important distinction have been found between long time spin evolutions in classically chaotic and regular systems. In the former case the spin polarization relaxes to zero within relaxation time much larger than the DP relaxation, while in the latter case it evolves to a time independent residual value. The quantum mechanical analysis of the spin evolution based on the exact solution of the Schrödinger equation with Rashba SOI has confirmed the results of the classical simulations for the circular dot, which is expected to be valid in general regular systems. In contrast, the spin relaxation down to zero in chaotic dots contradicts to what have to be expected from quantum mechanics. This signals on importance at long time of the mesoscopic echo effect missed in the semiclassical simulations. I INTRODUCTIONSpin relaxation in semiconductors is an important physical phenomenon being actively studied recently in connection with various spintronics applications [1]. In doped bulk samples and quantum wells (QW) of III-V semiconductors at low temperatures spin relaxation is mostly due to the DP mechanism [2]. This mechanism does not involve any inelastic processes, so that the exponential decay of the spin polarization is determined entirely by the spin-orbit interaction (SOI) and elastic scattering of electrons on the impurities. However, in case of confined systems such as quantum dots (QD) with atomic-like eigenstates, the SOI has been incorporated into the structure of the wave functions of the discrete energy levels. Without inelastic interactions, an initial wave packet with a given spin polarization will evolve in time as a coherent superposition of these discrete eigenstates. Therefore, the corresponding expectation value of the spin polarization will oscillate in time without any decay. To obtain a polarization decay in the QD's, extra effects have to be introduced into the system, e.g., the inelastic interactions between electrons and phonons mediated by the spin-orbit [3,4] and nuclear hyperfine effects [3,5,6]. Accordingly, a spin relaxation in QD's induced by these effects is a real dephasing process.Unlike such an inelastic relaxation in QD's, the DP spin relaxation in unbounded systems seems to be a quite different phenomenon, because the scattering on impurities is elastic and there is no dephasing of the electron wave functions in the systems. However, the spin polarization does decay in time exponentially, as if it would be a true dephasing process. To explain this phenomenon, let us consider an electron moving diffusively through an unbounded system with random elastic scatters. This electron is described by a wave packet represented by a superposition of continuum eigenstates. During a ...

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Section: Path Integrals For the Spin Evolutionmentioning

confidence: 99%

Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling

2004

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“…75,76 Measurements are performed in quasi-backscattering geometry (Figure 3-c) with crossed linear polarizations of the laser and scattered light (depolarized geometry). It relies on the spin-flip intrasubbands transitions between the inner and outer branches (Figure 3-c).…”

Section: Characterization Of Rashba and Dresselhaus Couplingsmentioning

confidence: 99%

“…Interestingly, by acting on the n or p doping of the sample, it has been possible to probe the splitting either in the valence or conduction band. [75][76][77][78] Page 10 of 29 10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 A c c e p t e d m a n u s c r i p tHowever, such measurements require the Raman spectra to be conducted at very low temperature (T ⇡ 5 K). In those conditions, HOP exhibit a stable exciton.…”

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confidence: 99%

Rashba and Dresselhaus Couplings in Halide Perovskites: Accomplishments and Opportunities for Spintronics and Spin–Orbitronics

Képénékian

Even

2017

J. Phys. Chem. Lett.

174

181

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In halide hybrid organic-inorganic perovskites (HOP), spin-orbit coupling (SOC) presents a well-documented large influence on band structure. However, SOC may also present more exotic effects, such as Rashba and Dresselhaus couplings. In this perspective, we start by recalling the main features of this effect and what makes HOP materials ideal candidates for the generation and tuning of spin-states. Then, we detail the main spectroscopy techniques able to characterize these effects and their application to HOP. Finally, we discuss potential applications in spintronics and in spin-orbitronics in those non-magnetic systems, that would complete the skill set of HOP and perpetuate its ride on the crest of the wave of popularity started with optoelectronics and photovoltaics. Graphical TOC EntryPage 2 of 29 2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 A c c e p t e d m a n u s c r i p tThe continuous success of halide hybrid organic-inorganic perovskites (HOP) as solar cell active materials follows several paths. The main activity after 2012 consisted in the search for improvement of the power conversion efficiency (PCE) in typical laboratory configuration (small area, controlled environment). It led to an unprecedented growth of the PCE that has repeatedly reached record values over 22%. 1,2 Meanwhile, another branch of HOP studies have been focused on improving the stability of those cells unfortunately sensitive to light and moisture. 3,4 Opting for various mixtures of halide and cations, 2 various forms, e.g. layered HOP, [5][6][7] or by encapsulating the materials, the stability went from few hours to several thousands hours. Encouraged by these breakthroughs, a third path has pushed the area of hight performance solar cells from less than 1 cm 2 up to 50 cm 2 with a PCE of 12.6%, 8 bringing the perovskite solar cells even closer to commercial use.A common point to all these record HOP materials is the presence of lead. Even though a large effort has been and still is dedicated to the search for efficient lead-free HOP materials, 9,10 their current record PCE remains around 6.4%. 11 It is certainly unfortunate for solar cells because of the known toxicity of lead, 12 even though solutions have early been proposed, 13,14 however, due to the large spin-orbit coupling (SOC) exhibited by Pb, it represents a great opportunity for optoelectronics, spintronics and spin-orbitronics applications where undesired heavy elements can find a place (e.g. arsenic, cadmium).The first identified effect of SOC in HOP materials has been a surprising giant splitting of conduction bands, 15,16 instead of the usual valence band splitting observed in classical semiconductors. 17 It has a strong influence on the band gap energy as well as on the effective masses and the oscillator strength of the optical transitions at the band gap. The chan...

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“…In GaAs/Al x Ga 1−x As structures 14,15 and Si-based transistors 16 , the SO coupling constants typically range from 10 −10 to 10 −9 eV·cm. It is important to mention that by applying an external bias across the quantum well, it is possible to manipulate the magnitude of α in InGaAs/InAlAs-based 17 and GaAs/AlAs-based [18][19][20] systems and even change its sign by doping 21 .…”

Section: Introductionmentioning

confidence: 99%

Spin relaxation in quantum dots with random spin-orbit coupling

Sherman

Lockwood

2005

Phys. Rev. B

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We investigate the longitudinal spin relaxation arising due to spin-flip transitions accompanied by phonon emission in quantum dots where the strength of the Rashba spin-orbit coupling is a random function of the lateral (in-plane) coordinate on the spatial nanoscale. In this case the Rashba contribution to the spin-orbit coupling cannot be completely removed by applying a uniform external bias across the quantum dot plane. Due to the remnant random contribution, the spin relaxation rate cannot be decreased by more than two orders of magnitude even when the external bias fully compensates the regular part of the spin-orbit coupling.

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Spin orientation at semiconductor heterointerfaces

Cited by 195 publications

References 20 publications

Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling

Spin relaxation dynamics of quasiclassical electrons in ballistic quantum dots with strong spin-orbit coupling

Rashba and Dresselhaus Couplings in Halide Perovskites: Accomplishments and Opportunities for Spintronics and Spin–Orbitronics

Spin relaxation in quantum dots with random spin-orbit coupling

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