2012
DOI: 10.1088/0268-1242/27/5/055016
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Spin phenomena in asymmetrical [0 0 1] GaAs/AlxGa1−xAs quantum wells

Abstract: Averkiev et al (2006 Phys. Rev. B 74 033305) studied carrier-spin phenomena in asymmetrical [0 0 1] GaAs/Al x Ga 1−x As quantum wells by means of Hanle effect, i.e. with a magnetic field applied perpendicular to the growth direction. They interpreted their photoluminescence results with the help of a model that takes into account neither the full symmetry of carrier eigenstates nor the effect of the applied magnetic field and derived spin-relaxation times for the full photogenerated carrier population. Using … Show more

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