Spin polarisation using gate voltage through a Rashba barrier in graphene

Wu, Xiuqiang

doi:10.1088/0022-3727/49/10/105305

Cited by 3 publications

(3 citation statements)

References 46 publications

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“…This achievement is in agreement with the result of Ref. [27] in which the transmission probability is larger for lower gate voltages. The mentioned change in the spin orientation by the RSOC is useful in the applications that use a gate voltage for the spin filtration.…”

Section: Resultssupporting

confidence: 93%

“…It found that the sign of the spin polarization can switch from positive to negative by adjusting the electric potential at any RSOC. [27] There also exist technological applications of the grephene in spintronic devices. The graphene nanostrips can be used as digital memory devices in which the spin-polarized states can be treated as switchable quantum bits through the applied voltage.…”

Section: Introductionmentioning

confidence: 99%

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Quantum Spin Transport in Rashba Spin-Orbit-Coupled Graphene Nanoflakes

Nikoofard¹,

Laghaei²,

Semiromi³

2017

Commun. Theor. Phys.

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We study the spin-resolved transport in a two-terminal graphene nanoflake device with a Rashba spin-orbit coupling region in the center of the device. The Green’s function method is applied to the system and the spin transmission probability and the spin polarization in x, y, and z directions are calculated. It is found that the components of the spin polarization are antisymmetric functions of Fermi energy, which oscillate and decay to the zero with increasing the energy for all values of the Rashba strength. It is shown that by tuning the Rashba strength via a gate voltage and/or changing the size of the system, it is possible to control the sign and magnitude of the spin polarization. The system represented here is a typical candidate for full electrical spintronic devices based on the carbon materials that are used for spin filtration.

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Section: Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Quantum Spin Transport in Rashba Spin-Orbit-Coupled Graphene Nanoflakes

Nikoofard¹,

Laghaei²,

Semiromi³

2017

Commun. Theor. Phys.

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“…In analogy with the differential spin transmission for spintronics [56][57][58][59][60], we define the differential valley transmission P T = (TKK +T KK )−(T K K +T K K ) T that describes the difference of transmission for the K and K states through the scattering region with the total transmission T = T KK + T KK + T K K + T K K . In fig.…”

Section: (A) the Low-energy Effective Hamiltonianmentioning

confidence: 99%

Tunable valley filtering in graphene with intervalley coupling

Meng

2016

EPL

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The valley filtering in normal/valley-coupled/normal graphene junction is investigated theoretically by the mode-matching method. It is shown that the valley-dependent transmission probability in this junction exhibits considerable angle-dependent features. It is also shown that the differential valley transmission PT is an odd function of the incident angle while the total transmission T is an even function of the incident angle. It is also found that the magnitude and sign of the valley polarization component Px of the outgoing current can be effectively changed by tuning the Fermi energy or the electronic potential in the valley-coupled graphene region. These results are very useful for potential valleytronics applications.

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