Spin-polarization limit in Bi<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn mathvariant="bold">2</mml:mn></mml:msub></mml:math>Te<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mn mathvariant="bold">3</mml:mn></mml:msub></mml:math>Dirac cone studied by angle- and spin-resolved photoemission experiments and<i>ab initio</i>calculations

Herdt, A.; Pluciński, Ł.; Bihlmayer, Gustav; Mußler, Gregor; Döring, Sven; Krumrain, J.; Grützmacher, Detlev; Blügel, Stefan; Schneider, Claus M.

doi:10.1103/physrevb.87.035127

Cited by 39 publications

(50 citation statements)

References 22 publications

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“…Further, the TSS of Bi 2 Te 3 shows a helical spin polarization of up to 40% in Fig. 5f, which confirms its topological nature and is in agreement with what was reported earlier26. On the contrary, Fig.…”

Section: Resultssupporting

confidence: 92%

Bi1Te1 is a dual topological insulator

et al. 2017

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New three-dimensional (3D) topological phases can emerge in superlattices containing constituents of known two-dimensional topologies. Here we demonstrate that stoichiometric Bi1Te1, which is a natural superlattice of alternating two Bi2Te3 quintuple layers and one Bi bilayer, is a dual 3D topological insulator where a weak topological insulator phase and topological crystalline insulator phase appear simultaneously. By density functional theory, we find indices (0;001) and a non-zero mirror Chern number. We have synthesized Bi1Te1 by molecular beam epitaxy and found evidence for its topological crystalline and weak topological character by spin- and angle-resolved photoemission spectroscopy. The dual topology opens the possibility to gap the differently protected metallic surface states on different surfaces independently by breaking the respective symmetries, for example, by magnetic field on one surface and by strain on another surface.

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Section: Resultssupporting

confidence: 92%

Bi1Te1 is a dual topological insulator

et al. 2017

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“…The in-plane spin polarization of Bi 2 Te 3 was also measured, and it was predicted to be around 60% for surfaces [24] and 45% for thin films [25]. The highest obtained value of these three binary compounds was the one of Sb 2 Te 3 around 70% [26], but the Dirac point of the SS, like in the case of Bi 2 Te 3 , lies deep below the Fermi energy and close to the bulk bands, limiting its potential applications.…”

Section: Introductionmentioning

confidence: 99%

Electronic and spin structure of a family of Sn-based ternary topological insulators

et al. 2015

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We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the framework of density functional theory. These compounds exist with the following stoichiometries: SnX 2 Te 4 , SnX 4 Te 7 , and SnBi 6 Te 10 (X = Sb and Bi). Where a septuple layer or a quintuple layer and septuple layer blocks alternate along the hexagonal axis. We reveal that the bulk band gap in these compounds is about 100 meV and recognize a strong dependence of the spin polarization on the cleavage surface. The calculated spin polarization reaches 85% in some cases, that is one of the highest predicted values hitherto. Since the electron spin polarization is a relevant parameter for spintronics technology, this new family is suitable for applications within this field.

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“…Because of their efficiency, the LDA and GGA functionals have allowed for the study of surface and edge states of these materials [14][15][16][17][18][19], and they have shown mostly good agreement with the experimental results. However, LDA and GGA are approximations to the ground-state energy and cannot in principle be expected to yield accurate excited-state properties.…”

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confidence: 57%

Many‐Body Effects in the Electronic Structure of Topological Insulators

Aguilera

Nechaev

Friedrich

et al. 2015

Topological Insulators

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IntroductionMost of the calculations present in the literature for topological insulators (TIs) are based on model Hamiltonians or parameter-dependent tight-binding descriptions [1][2][3][4], and density functional theory (DFT) employing either the local density approximations (LDA) or generalized gradient approximations (GGA) [5][6][7][8][9][10][11][12][13]. Because of their efficiency, the LDA and GGA functionals have allowed for the study of surface and edge states of these materials [14][15][16][17][18][19], and they have shown mostly good agreement with the experimental results. However, LDA and GGA are approximations to the ground-state energy and cannot in principle be expected to yield accurate excited-state properties. More specifically, one often takes the single-particle states that solve the Kohn-Sham (KS) equation of DFT as approximate excitations energies. But these states, strictly speaking, are merely mathematical tools that cannot be endowed with a physical meaning. In particular, they suffer from a strong self-interaction error and lack many-body renormalization effects. Related to that, the DFT bandgap of insulators and semiconductors, though in fact being a ground-state property, is systematically underestimated [20][21][22]. TIs are not an exception: because of their inverted bandgaps, the DFT underestimation of the bandgaps has not only quantitative but also qualitative consequences, and it can even lead to the wrong prediction of some trivial insulators as TIs [23]. Recently, to overcome this problem, calculations [23-33] based on the approximation [34] for the self-energy have started to emerge in the theoretical study of TIs and have shown that not only a much better agreement of the bandgap (in nature and magnitude) but also an improvement in the effective masses and spin-orbit splittings is found when compared to experimental results.In TIs, a strong spin-orbit coupling (SOC) causes the top valence and the bottom conduction band to invert in the bandgap region. The bands hybridize so that an energy gap forms that is of the order of the spin-orbit strength (up to a few hundreds of millielectronvolts). Such small bandgaps require a reliable description of the electronic structure. The inverted band structure is often -but not always, Topological Insulators: Fundamentals and Perspectives, First Edition. Edited

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Spin-polarization limit in Bi2Te3Dirac cone studied by angle- and spin-resolved photoemission experiments andab initiocalculations

Cited by 39 publications

References 22 publications

Bi1Te1 is a dual topological insulator

Bi1Te1 is a dual topological insulator

Electronic and spin structure of a family of Sn-based ternary topological insulators

Many‐Body Effects in the Electronic Structure of Topological Insulators

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