Spin-polarized electrons and magnetoresistance in ferromagnetic tunnel junctions and multilayers

Suezawa, Y.; Gondō, Yasuo

doi:10.1016/0304-8853(93)90677-t

Cited by 29 publications

(12 citation statements)

References 10 publications

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“…4. It is clear from these figures that there is a significant negative MR component, which depends on the angle of the applied field and is similar to the results obtained by Suezawa and Gondo for Ni/Co cross junctions [10].…”

Section: Measurements and Resultssupporting

confidence: 87%

Graphene in Multilayered CPP Spin Valves

Mohiuddin

Hill²,

Elias³

et al. 2008

IEEE Trans. Magn.

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In this paper, we have sandwiched a single-atom-thick sheet of graphene, a 2-D allotrope of carbon that is exciting tremendous research interest, between two ferromagnetic electrodes. Graphene has already been shown to support spin polarized conduction, when spin polarized electrons were injected into graphene sheets along the plane using magnetic electrodes. Here, we study spin polarized conduction perpendicular the plane of the graphene in conduction perpendicular to plane (CPP) geometry. It was found that graphene was sufficient to reduce the exchange coupling between the magnetic electrodes. We also found that in a NiFe/Au/Graphene/NiFe stack, the graphene channels the spin current perpendicular to the plane and thus produces an enhanced MR effect compared to a simple stack without the graphene. A significant anisotropy was found in the observed magnetoresistance in the cross electrode geometry employed.Index Terms-Conduction perpendicular to plane (CPP), magnetoresistive device, permalloy, spin valve.

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Section: Measurements and Resultssupporting

confidence: 87%

Graphene in Multilayered CPP Spin Valves

Mohiuddin

Hill²,

Elias³

et al. 2008

IEEE Trans. Magn.

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“…In the most common situation the non-magnetic spacer in a spin-valve is a wide-gap oxide, usually Al2O3 [8][9][10] or MgO [11][12][13][14][15] . Recently, 2D materials, with atomically-thin layers, have been proposed as useful nonmagnetic spacer layers in spin-valve devices.…”

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confidence: 99%

Spin-Valve Effect in NiFe/MoS₂/NiFe Junctions

et al. 2015

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Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what is expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ∼9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

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“…The structure of single layer of WS 2 crystals is formed by covalently bonded in-plane S-W-S atoms, which contain of two sheets of S atoms and one sheet of W atoms and are hexagonally packed. In general wide band gap oxides such as Al 2 O 3 14 15 16 or MgO are previously being utilized as a nonmagnetic spacer in spin valve devices 17 18 19 20 21 . The basic principal of spin valve comprises of two ferromagnetic metal layers decoupled by a non-magnetic insertion, which permits parallel and antiparallel alignment of the magnetizations of two magnetic layers.…”

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confidence: 99%

Room temperature spin valve effect in NiFe/WS2/Co junctions

Iqbal

Siddique

et al. 2016

Sci Rep

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The two-dimensional (2D) layered electronic materials of transition metal dichalcogenides (TMDCs) have been recently proposed as an emerging canddiate for spintronic applications. Here, we report the exfoliated single layer WS2-intelayer based spin valve effect in NiFe/WS2/Co junction from room temperature to 4.2 K. The ratio of relative magnetoresistance in spin valve effect increases from 0.18% at room temperature to 0.47% at 4.2 K. We observed that the junction resistance decreases monotonically as temperature is lowered. These results revealed that semiconducting WS2 thin film works as a metallic conducting interlayer between NiFe and Co electrodes.

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Spin-polarized electrons and magnetoresistance in ferromagnetic tunnel junctions and multilayers

Cited by 29 publications

References 10 publications

Graphene in Multilayered CPP Spin Valves

Graphene in Multilayered CPP Spin Valves

Spin-Valve Effect in NiFe/MoS₂/NiFe Junctions

Room temperature spin valve effect in NiFe/WS2/Co junctions

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Spin-polarized electrons and magnetoresistance in ferromagnetic tunnel junctions and multilayers

Cited by 29 publications

References 10 publications

Graphene in Multilayered CPP Spin Valves

Graphene in Multilayered CPP Spin Valves

Spin-Valve Effect in NiFe/MoS2/NiFe Junctions

Room temperature spin valve effect in NiFe/WS2/Co junctions

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Product

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About

Spin-Valve Effect in NiFe/MoS₂/NiFe Junctions