The
electron dynamics of atomically thin 2-D polar metal heterostructures,
which consisted of a few crystalline metal atomic layers intercalated
between hexagonal silicon carbide and graphene grown from the silicon
carbide, were studied using nearly degenerate transient absorption
spectroscopy. Optical pumping created charge carriers in both the
2-D metals and graphene components. Wavelength-dependent probing suggests
that graphene-to-metal carrier transfer occurred on a sub-picosecond
time scale. Following rapid (<300 fs) carrier–carrier scattering,
charge carriers monitored through the metal interband transition relaxed
through several consecutive cooling mechanisms that included sub-picosecond
carrier–phonon scattering and dissipation to the silicon carbide
substrate over tens of picoseconds. By studying 2-D In, 2-D Ga, and
a Ga/In alloy, we resolved accelerated electron–phonon scattering
rates upon alloy formation as well as structural influences on the
excitation of in-plane phonon shear modes. More rapid cooling in alloys
is attributed to increased lattice disorder, which was observed through
correlative polarization-resolved second harmonic generation and electron
microscopy. This connection between the electronic relaxation rates,
far-field optical responses, and metal lattice disorder is made possible
by the intimate relation between nonlinear optical properties and
atomic-level structure in these materials. These studies provided
insights into electronic carrier dynamics in 2-D crystalline elemental
metals, including resolving contributions from specific components
of a 2-D metal-containing heterojunction. The correlative ultrafast
spectroscopy and nonlinear microscopy results suggest that the energy
dissipation rates can be tuned through atomic-level structures.