Numerical Simulation of Optoelectronic Devices 2010
DOI: 10.1109/nusod.2010.5595643
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Spin polarized semiconductor lasers

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Cited by 15 publications
(24 citation statements)
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“…The responsivity ( R ) is a measure of photocurrent generation efficiency of a photodetector and is defined as the photocurrent generated by the optical power incident on an effective area of a photoconductor ( P ). Responsivity is written as where P = IA = Iwl , where A is the projected area of the photoconductor ( A = wl ), w is the width, and l is the length of the conducting channel Figure b depicts the responsivity as a function of light intensity for the InSe nanoflake detector.…”
Section: Resultsmentioning
confidence: 99%
“…The responsivity ( R ) is a measure of photocurrent generation efficiency of a photodetector and is defined as the photocurrent generated by the optical power incident on an effective area of a photoconductor ( P ). Responsivity is written as where P = IA = Iwl , where A is the projected area of the photoconductor ( A = wl ), w is the width, and l is the length of the conducting channel Figure b depicts the responsivity as a function of light intensity for the InSe nanoflake detector.…”
Section: Resultsmentioning
confidence: 99%
“…Metallic nanostructured films incorporated into optoelectronic devices such as photodetectors have attracted attention for their ability to support localized surface plasmon polaritons (LSPPs), which can enhance optical absorbance, internal electric field, and ultimately device performance. Such films can also act as a device electrode, making them a cost-effective, flexible, high-performance alternative to the commonly used indium tin oxide (ITO), which is expensive and brittle. , Plasmonic enhancements provided by nanostructured electrodes can be engaged by light of varying wavelengths depending on the geometry, periodicity, and material of the nanostructures. , This provides a mechanism for tuning and enhancing the spectral photoresponse of optoelectronic devices, making plasmonic nanostructures attractive for a wide variety of applications including solar cells, fiber-optic communications, displays, disk drives, motion sensors, filter-free imaging, flame and missile detection, environmental monitoring, and industrial process control. …”
Section: Introductionmentioning
confidence: 99%
“…Photodetectors that are sensitive to UV illumination are important in a variety of applications including environmental monitoring, scientific research, imaging, and flame and missile detection. Despite their applicability, the extension of plasmonic enhancement mechanisms to UV-selective devices has been relatively slow because the common plasmonic metals of Ag and Au cannot support surface plasmon polaritons (SPPs) when illuminated by light with wavelengths shorter than about 350 nm . Al is well-suited to support and tune SPPs in the UV spectral range due to its carrier concentration and dielectric function, although oxide formation on the Al surface can interfere with and cause a red shift in its plasmonic properties. In addition, Al provides an attractive material option for UV photodetectors due to its relative abundance and low cost compared to Ag and Au.…”
Section: Introductionmentioning
confidence: 99%
“…Besides the device circuit factor, i.e., the RC time constant, the modulation response of a semiconductor light-emitting device is controlled by three factors, including the decay rate of its carrier concentration, the injected rate of the carrier, and the thickness of its active layer. In a QW LED, these three factors are lumped into the time constant, τ as [ 56 ] τ = ( qd / JB ) 1/2 . …”
Section: Surface Plasmon Coupling For Enhancing Modulation Responsementioning
confidence: 99%