Spin-polarized transport across a<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">La</mml:mi></mml:mrow><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">MnO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:

Chen, Z. Y.; Biswas, Amlan; Žutić, Igor; Wu, Tom; Ogale, S. B.; Greene, R. L.; Venkatesan, T.

doi:10.1103/physrevb.63.212508

Cited by 68 publications

(28 citation statements)

References 38 publications

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“…Both of these limitations are relaxed in junctions with high temperature superconductors (HTSC's), but the lack of our understanding of these materials makes such structures more a test ground for fundamental physics rather then a quantitative tool to determine spin polarization (Chen et al, 2001;Vas'ko et al, 1998;Chen et al, 2005;Luo et al, 2005;Visani et al, 2007). There are also several important differences with the studies using conventional low temperature superconductors in N/S junctions.…”

Section: −1mentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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Section: −1mentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

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921

1,204

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“…Spin-dependent tunneling was also studied using a high-temperature superconducting electrode as a detector of spin polarization (Vas'ko et al, 1998;Chen et al, 2001). While this can significantly extend the temperature range in the tunneling experiments, a lack of understanding of high-temperature superconductors makes such structures more a test ground for fundamental physics than a quantitative tool for quantitatively determining P. There are also several important differences between studies using high-temperature and conventional low-temperature superconductors.…”

Section: F/i/s Tunnelingmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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“…Since the tunneling conductance is independent of the magnitude of the insulating barrier 51 , it is possible to estimate the spin-polarization in ferromagnets through the temperature dependence of the ZBCP. An experimental test would be carried out in La 0.7 Sr 0.3 MnO 3 /YBa 2 Cu 3 O 7−x junctions in near future 52,53,54,55 . When spin-triplet superconductors are attached to ferromagnets 43,44 , the ZBCP depends not only on the spinpolarization also on other parameters such as relative angles between the d-vector in triplet superconductors and the magnetic moment in ferromagnets 31,32,45,46 .…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of spin-polarized transport in ferromagnet/unconventional superconductor junctions

et al. 2003

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Tunneling conductance in ferromagnet / unconventional superconductor junctions is studied theoretically as a function of temperatures and spin-polarization in ferromagnets. In d-wave superconductor junctions, a zero-energy Andreev bound state drastically affects the temperature dependence of the zero-bias conductance (ZBC). In p-wave superconductor junctions, numerical results show various temperature dependence of the ZBC depending on the direction of the magnetic moment in ferromagnets and the pairing symmetry in superconductors such as px, py and px + ipy-wave symmetries. The last one is a candidate for the pairing symmetry of Sr2RuO4. From these characteristic features in the conductance, we may obtain the information about the degree of spin-polarization in ferromagnets and the direction of the d-vector in spin-triplet superconductors.

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Spin-polarized transport across aLa0.7Sr0.3MnO3

Abstract: Transport across an La 0.7 Sr 0.3 MnO 3 /YBa 2 Cu 3 O 7−x (LSMO/YBCO) interface is studied as a function of temperature and surface morphology.

Cited by 68 publications

References 38 publications

Semiconductor spintronics

Semiconductor spintronics

Spintronics: Fundamentals and applications

Temperature dependence of spin-polarized transport in ferromagnet/unconventional superconductor junctions

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