Spin-Polarized Transport Behavior Induced by Asymmetric Edge Hydrogenation in Hybridized Zigzag Boron Nitride and Graphene Nanoribbons

Wang, Lihua; Ding, Bingjun; Guo, Yong

doi:10.1007/s11664-018-6711-x

Cited by 4 publications

(2 citation statements)

References 39 publications

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“…Controlling the spin of electrons, rather than merely their orbital arrangement, can facilitate spintronics gadgets by reducing their power consumption, increasing information processing speed, and enhancing additional densities. Wang et al (2019) proposed a zigzag arrangement of nanoribbons generated by boron nitride functionalization, indicating that devices may exhibit various abnormal spin-polarized transport assets. Skirdkov and Zvezdin (2020) investigated the key styles of designs of spin-diode systems and its different modes, arousal of microwave effects of spin-torque magnetization diode MTJs, to achieve high microwave parameters sensitivity and attractive frequency characteristics.…”

Section: Related Workmentioning

confidence: 99%

“…In traditional diode, the interface between the layer is charge depletion layer whereas, in spin diode, the interface is spin depletion layer (Han, 2016). Landauer evaluates the spin current denoted under zero bias voltage via the interface-Buttiker formula (Wang et al, 2019), and the spin current is expressed (Musle et al, 2019) by the equation. (Skirdkov and Zvezdin, 2020):…”

Section: Monte Carlo Modelmentioning

confidence: 99%

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Modeling and implementation of spin diode based on two dimensional materials using Monte Carlo sampling method

Makdey

Patrikar

Hashmi

2020

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Purpose A “spin-diode” is the spintronics equivalent of an electrical diode: applying an external magnetic field greater than the limit of spin-diode BT flips the spin-diode between an isolating state and a conducting state [1]. While conventional electrical diodes are two-terminal devices with electrical current between the two terminals modulated by an electrical field, these two-terminal magneto resistive devices can generally be referred to as “spin-diodes” in which a magnetic field modulates the electrical current between the two terminals. Design/methodology/approach Current modulation and rectification are an important subject of electronics as well as spintronics spin diode is two-terminal magnetoresistive devices in which change in resistance in response to an applied magnetic field; this magnetoresistance occurs due to a variety of phenomena and with varying magnitudes and directions. Findings In this paper, an efficient rectifying spin diode is introduced. The resulting spin diode is formed from graphene gallium and indium quantum dots and antimony-doped molybdenum disulfide. Converting an alternating bias voltage to direct current is the main achievement of this model device with an additional profit of rectified spin-current. The non-equilibrium density functional theory with a Monte Carlo sampling method is used to evaluate the flow of electrons and rectification ratio of the system. Originality/value The results indicate that spin diode displaying both spin-current and charge-current rectification should be possible and may find practical application in nanoscale devices that combine logic and memory functions.

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Section: Related Workmentioning

confidence: 99%