Utilizing time-resolved Kerr rotation techniques, we have investigated the spin dynamics of a high mobility, low density two dimensional electron gas in a GaAs/Al 0.35 Ga 0.65 As heterostructure in dependence on temperature from 1.5 K to 30 K. It is found that the spin relaxation/dephasing time under a magnetic field of 0.5 T exhibits a maximum of 3.12 ns around 14 K, superimposed on an increasing background with rising temperature. The appearance of the maximum is ascribed to that at the temperature where the crossover from the degenerate to the nondegenerate regime takes place, electron-electron Coulomb scattering becomes strongest, and thus inhomogeneous precession broadening due to D'yakonov-Perel' (DP) mechanism becomes weakest. These results agree with the recent theoretical predictions [Zhou et al., PRB 75, 045305 (2007)], verifying the importance of electron-electron Coulomb scattering to electron spin relaxation/dephasing. PACS numbers: 72.25.Rb, 71.70.Ej, 78.47.jc In recent years, spin dynamics in semiconductors has attracted considerable attention because of its potential application in the spin-based devices. 1 The operation of these devices requires spin lifetime long enough to achieve storage, transport and processing of information. Therefore, a comprehensive understanding of spin relaxation mechanism is a key factor for the realization of these devices. It is generally accepted that the D'yakonov-Perel' (DP) mechanism is the leading spin relaxation/dephasing (R/D) mechanism in n-type zincblende semiconductors. 2 This is caused by an wavevector kdependent effective magnetic field Ω(k) from the bulk inversion asymmetry, 3 i.e., the Dresselhaus term, and/or the structure inversion asymmetry, 4 i.e., the Rashba term. The spin relaxation rate can be determined by τ −1 = Ω(k) 2 τ P (k), where τ P (k) is the momentum relaxation time. 5 As the electronelectron Coulomb scattering does not contribute to the momentum relaxation time τ p , it has long been widely believed that the electron-electron Coulomb scattering is irrelevant in the spin relaxation. 5,6,7,8,9,10,11 However, it was first pointed out by Wu and Ning 12 that in the presence of inhomogeneous broadening, any scattering, including the spin conserving electron-electron Coulomb scattering, can cause an irreversible spin relaxation and dephasing. This inhomogeneous broadening can be the energy-dependent g-factor, 12 the DP term, 13,14 and even the k-dependent spin diffusion along a spacial gradient. 15 In n-type GaAs quantum well, the importance of the electron-electron scattering to the spin relaxation was proved by Glazov and Ivchenko 16 by using perturbation theory and Weng and Wu 14 from a fully microscopic many-body approach. In a temperature-dependent experimental study of the spin relaxation in n-type (001) quantum wells, Harleyet al. indirectly verified the effects of the electron-electron scattering on spin relaxation. 17,18 Nevertheless, the importance of the Coulomb scattering to the spin relaxation/dephasing (R/D)has not yet been ...