Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy

Shelukhin, L. A.; Gareev, R. R.; Zbarsky, Vladyslav; Walowski, Jakob; Münzenberg, Markus; Pertsev, N. A.; Kalashnikova, A.M.

doi:10.1039/d2nr00637e

Cited by 7 publications

(4 citation statements)

References 59 publications

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“…Thus, tailored dispersion and nonreciprocity of the coupled modes can be obtained by fabricating a structure with certain values of the pining parameters 56,57 and geometrical asymmetry. Additionally, as shown in recent work, 58 the pinning parameters and thus the behavior of spin waves can be controlled at ultrashort time scales. Furthermore, the considered bilayer structure supports optical excitation of coherent coupled modes, 59 in which case mutual spin pumping may contribute to nonreciprocity.…”

Section: Discussionmentioning

confidence: 67%

Nonreciprocal collective magnetostatic wave modes in geometrically asymmetric bilayer structure with nonmagnetic spacer

et al. 2023

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Section: Discussionmentioning

confidence: 67%

Nonreciprocal collective magnetostatic wave modes in geometrically asymmetric bilayer structure with nonmagnetic spacer

et al. 2023

Self Cite

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“…At room temperature, the work revealed a magnetoresistance ratio of more than 200%. [231,232] When the B concentration is large, amorphous CoFeB layers result. By sputtering under optimized conditions, a highly textured MgO (001) layer grows on amorphous CoFeB.…”

Section: Spin Transfer Torque-based Transitionmentioning

confidence: 99%

Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing

Go,

Lim,

Lee

et al. 2024

Small Science

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Separate memory and processing units are utilized in conventional von Neumann computational architectures. However, regarding the energy and the time, it is costly to shuffle data between the memory and the processing entity, and for data‐intensive applications associated with artificial intelligence, the demand is ever increasing. A paradigm shift in traditional architectures is required, and in‐memory computing is one of the non‐von‐Neumann computing strategies. By harnessing physical signatures of the memory, computing workloads are administered in the same memory element. For in‐memory computing, a wide range of memristive material (MM) systems have been examined. Moreover, developing computing schemes that perform in the same sensory network and that minimize the data shuffle between the processing unit and the sensing element is a requirement, to process large volumes of data efficiently and decrease the energy consumption. In this review, an overview of the switching character and system signature harnessed in three archetypal MM systems is rendered, along with an integrated application survey for developing in‐sensor and in‐memory computing, viz., brain‐inspired or analogue computing, physical unclonable functions, and random number generators. The recent progress in theoretical studies that reveal the structural origin of the fast‐switching ability of the MM system is further summarized.

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“…Therefore, it has great application prospect in information storage and magnetic sensor fields. According to the theory of spintronics, the magnetic anisotropy of the thin film material is a key index to judge the successful application of spintronic devices [9][10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Effect of metal insertion on the magnetic properties and anomalous Hall effect in MgO/CoFeB/Ta/MgO films

Xu,

Hu,

Jia

et al. 2024

J. Phys. D: Appl. Phys.

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CoFeB-based nano-magnetic multilayers can be applied in magnetic sensors, magnetic random access memory and other logic devices, which have attracted wide attention. The magnetic properties and interface structure of the magnetic multilayers still need further research for future applications. The effects of Pt insertion on the perpendicular magnetic anisotropy and the anomalous Hall effect of MgO/CoFeB/Pt/Ta/MgO multilayers were studied. It is found that the sample with 0.2 nm Pt insertion at the CoFeB/Ta interface and annealed at 250℃ can transform the films from in-plane magnetic anisotropy to perpendicular magnetic anisotropy. The effective magnetic anisotropy Keff can reach 1.82×106 erg/cm3. The Pt insertion and annealing heat treatment can promote the migration of oxygen from MgO at the top layer to CoFeB/Ta interface and combine with Fe to generate iron oxide, and improve the orbital hybridization of Fe 3d and O 2p, thus successfully inducing the perpendicular magnetic anisotropy of the film samples. In addition, Pt insertion and annealing treatment can improve the side-jump mechanism and the skew scattering mechanism which contribute to the anomalous Hall effect. This work provides guidance for the application of perpendicular magnetic anisotropy materials in magnetic sensor and memory devices.

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Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy

Abstract: Magnetic tunnel junction (MTJ) is a leading contender for the next generation of high-density nonvolatile memories. Fast and efficient switching of MTJs between logic states is a challenging problem, which...

Cited by 7 publications

References 59 publications

Nonreciprocal collective magnetostatic wave modes in geometrically asymmetric bilayer structure with nonmagnetic spacer

Nonreciprocal collective magnetostatic wave modes in geometrically asymmetric bilayer structure with nonmagnetic spacer

Nonvolatile Memristive Materials and Physical Modeling for In‐Memory and In‐Sensor Computing

Effect of metal insertion on the magnetic properties and anomalous Hall effect in MgO/CoFeB/Ta/MgO films

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