Spin splitting and anisotropy of cyclotron resonance in the conduction band of GaAs

Mayer, H.; Rößler, U.

doi:10.1103/physrevb.44.9048

Cited by 98 publications

(61 citation statements)

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“…Nowadays, five and more band k · p models are state of the art and many lowtemperature experiments have confirmed the incredible accuracy of k · p calculations. [3][4][5][6][7][8] All these experiments support the validity of k · p theory whereas a single but central experiment, which measures the temperature dependence of the electron Landé g factor in GaAs, shows a strong discrepancy between experiment and k · p theory. 9 In this Brief Report we present extremely high precision, temperature-dependent measurements of the electron Landé g factor and show that by introducing a temperaturedependent interband matrix element yields a consistent explanation for the temperature dependence of the electron Landé g factor and the effective mass within common k · p theory, while keeping full temperature dependence on the very well-known interband critical points.…”

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Temperature-dependent electron Landégfactor and the interband matrix element of GaAs

et al. 2009

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Very high precision measurements of the electron Landé g factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the temperature-dependent effective mass temperature dependence of the interband matrix element within a common five-level k · p theory can model both parameters consistently. A strong decrease in the interband matrix element with increasing temperature consistently closes a long lasting gap between experiment and theory and substantially improves the modeling of both parameters. DOI: 10.1103/PhysRevB.79.193307 PACS number͑s͒: 78.55.Cr, 71.18.ϩy, 78.20.Ci, 78.47.Cd The semiempirical k · p theory is a universal tool to calculate the band structure in semiconductors and semiconductor heterostructures and is regularly employed in such different fields as the physics of semiconductor laser design, the quantum Hall effect and spintronics. The part of the theory describing magnetic field related phenomena has been extensively improved since its introduction by Kane 1 and Luttinger and Kohn 2 in the mid fifties. Nowadays, five and more band k · p models are state of the art and many lowtemperature experiments have confirmed the incredible accuracy of k · p calculations. [3][4][5][6][7][8] All these experiments support the validity of k · p theory whereas a single but central experiment, which measures the temperature dependence of the electron Landé g factor in GaAs, shows a strong discrepancy between experiment and k · p theory. 9In this Brief Report we present extremely high precision, temperature-dependent measurements of the electron Landé g factor and show that by introducing a temperaturedependent interband matrix element yields a consistent explanation for the temperature dependence of the electron Landé g factor and the effective mass within common k · p theory, while keeping full temperature dependence on the very well-known interband critical points. The k · p theory is a perturbation theory calculating the electronic band structure by expansion around a single point in the Brillouin zone. In direct semiconductors such as GaAs, the high symmetry ⌫ point is the natural expansion point. The only input parameters are in this case the measured band gaps at k = 0 and the interband matrix elements ͑P , PЈ , PЉ ,...͒. The change in the band-gap energies with the lattice temperature are very well known for GaAs and the only remaining relevant parameter which does not possess a direct experimental access is the interband matrix element P or the related Kane energy E P = ͑2m 0 / ប 2 ͒P 2 , respectively. 1 The temperature dependence of P has been assumed to be marginal since P is inversely proportional to the interatomic distance a ͑Ref. 10͒ and the well-known change in a with temperature T due to anharmonic lattice potential is small. According to the relation E P ϰ 1 / a 2 between 0 and 300 K E P should change about −0.4% or less.11,12 However, this procedure only considers the static...

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Temperature-dependent electron Landégfactor and the interband matrix element of GaAs

et al. 2009

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“…57 When the interaction with other bands is taken into account, new terms, non-linear in the momentum, appear in the SOI. A model that can capture this picture is the so-called extended Kane model (Rössler, 1984;Mayer and Rössler, 1991;Hermann and Weisbuch, 1977;Pfeffer and Zawadzki, 1990;Zawadzki and Pfeffer, 2004) in which in addition to the Γ 6c , Γ 8v , and Γ 7 bands included in the standard Kane model, the 6 p-like higher energy conduction bands are considered. The antibonding p-like conduction bands consist of a quadruplet Γ 8c and a doublet Γ 7c (see Fig.…”

Section: E2 Spin-orbit Related Effects In Symmetric Structuresmentioning

confidence: 99%

Semiconductor spintronics

Fabian¹,

Matos-Abiague²,

Ertler³

et al. 2007

Acta Physica Slovaca. Reviews and Tutorials

922

1,204

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Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry-giant magnetoresistance systems are used as hard disk read heads-semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field. 72.25.Rb, 75.50.Pp, PACS

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“…Such a representation where all the relevant quantities are slowly varying continuous functions may lead one to believe that the model is a continuous one and that it cannot capture the full symmetry of the nanostructure. 31 The multiband kÁp Hamiltonians [32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49] are capable of reproducing the bulk band structure more accurately than the standard 8-band Hamiltonian. Some of these, that include a large number of bands (Z15 or 30 after incorporation of the spin degree of freedom), are even capable of reproducing the bulk band structure throughout the whole Brillouin zone.…”

Section: Introductionmentioning

confidence: 99%

Symmetry reduction in multiband Hamiltonians for semiconductor quantum dots: The role of interfaces and higher energy bands

Tomić¹,

Vukmirović²

2011

Journal of Applied Physics

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The role of interfaces and higher bands on the electronic structure of embedded semiconductor quantum dots (QDs) was investigated. The term in the multiband kÁp Hamiltonian that captures the effect of interface band mixing was derived starting from the microscopic theory. It was shown, analytically and numerically, that, with such a term included, the right symmetry of the QD system can be captured. It leads to splitting of otherwise degenerate energy levels of the order of several meV. The inclusion of additional higher bands beyond the ones from the standard eight-band model also leads to the reduction of symmetry from an artificially high one to the true atomistic symmetry of the system, however their quantitative effect is weaker. These results prove that the multiband kÁp Hamiltonians are fully capable of describing the correct symmetry of a QD.

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Spin splitting and anisotropy of cyclotron resonance in the conduction band of GaAs

Cited by 98 publications

References 10 publications

Temperature-dependent electron Landégfactor and the interband matrix element of GaAs

Temperature-dependent electron Landégfactor and the interband matrix element of GaAs

Semiconductor spintronics

Symmetry reduction in multiband Hamiltonians for semiconductor quantum dots: The role of interfaces and higher energy bands

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