2020
DOI: 10.1103/physrevb.101.165103
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Spin splitting and strain in epitaxial monolayer WSe2 on graphene

Abstract: We present the electronic and structural properties of monolayer WSe2 grown by pulsed-laser deposition on monolayer graphene (MLG) on SiC. The spin splitting in the WSe2 valence band at K was ∆SO = 0.469 ± 0.008 eV by angle-resolved photoemission spectroscopy (ARPES). Synchrotron-based grazing-incidence inplane X-ray diffraction (XRD) revealed the in-plane lattice constant of monolayer WSe2 to be aWSe 2 = 3.2757 ± 0.0008Å. This indicates a lattice compression of −0.19% from bulk WSe2. By using experimentally d… Show more

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Cited by 25 publications
(18 citation statements)
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“…The opposite variation is observed for compressive biaxial strain (see Supplementary Information, Figure S4). The final inferred ∆ SOC variation, +15 meV per 1% in plane tensile strain, is independent of the chosen exchange-correlation functionals (PBE or HSE) and matches the existing theoretical results on WS 2 and WSe 2 [36,38]. However, the variation of ∆ SOC at K is not the only marker of biaxial strain in the WS 2 band structure.…”
Section: Resultssupporting
confidence: 84%
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“…The opposite variation is observed for compressive biaxial strain (see Supplementary Information, Figure S4). The final inferred ∆ SOC variation, +15 meV per 1% in plane tensile strain, is independent of the chosen exchange-correlation functionals (PBE or HSE) and matches the existing theoretical results on WS 2 and WSe 2 [36,38]. However, the variation of ∆ SOC at K is not the only marker of biaxial strain in the WS 2 band structure.…”
Section: Resultssupporting
confidence: 84%
“…To support this argument, we now compare our experimental ARPES data with band structure calculations computed using DFT. For monolayer WS 2 , a tensile in-plane biaxial strain will decrease the vertical distance between the upper and lower sublayers of the S atoms, which, in turn, reduces the bandgap and affects the ∆ SOC at K [36,38]. In the DFT calculations, the biaxial strain is applied by modifying the lattice constant of WS 2 , followed by a structural relaxation to obtain the most favorable atomic positions.…”
Section: Resultsmentioning
confidence: 99%
“…The precise electronic characterization of the distinct regions on the flakes becomes possible by adding spatial resolution to ARPES experiments 33 . The CVD-grown flakes were transferred onto epitaxial graphene on SiC before conducting the nano-XPS/ARPES measurements to avoid charging effects [35][36][37][38] (see the "Methods" section). By integrating the photoemission intensity within a selected energy window around the Se 3d peak, while scanning the sample along two in-plane directions, we can first get morphological information on the sample (see Fig.…”
Section: Atypical Behavior Of Wsmentioning
confidence: 99%
“…Before discussing our numerical calculations, we note that the results depend on i) the position of the Dirac point of graphene within the band gap E g of the TMDC, and ii) on the value of E g . Theoretical DFT calculations are known to often underestimate E g and they seem to give [37] different results from experiments [61,62] for the energy alignment of graphene's Dirac point with the TMDC bands. Therefore we performed our calculations for two parameter sets, one relying on DFT calculations [63], and one extracted from ARPES measurements [61,62].…”
mentioning
confidence: 94%
“…Theoretical DFT calculations are known to often underestimate E g and they seem to give [37] different results from experiments [61,62] for the energy alignment of graphene's Dirac point with the TMDC bands. Therefore we performed our calculations for two parameter sets, one relying on DFT calculations [63], and one extracted from ARPES measurements [61,62]. With the exception of Fig.…”
mentioning
confidence: 94%