Spin Structures and Domain Walls in Multiferroics Spin Structures and Magnetic Domain Walls in Multiferroics

Pyatakov, A. P.; Zvezdin, A. K.; Vlasov, A. M.; Сергеев, А. С.; Sechin, D. A.; Николаева, Е. П.; Николаев, А.В.; Chou, Hsiung; Sun, Shuo; Calvet, Laurie E.

doi:10.1080/00150193.2012.743836

Cited by 14 publications

(11 citation statements)

References 45 publications

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“…For the study of the peculiarities in motion of domain walls, a dynamic method was applied, in which the wall is displaced under the action of a pulsed electric field. Furthermore, the specific features of the behavior of domain walls under the action of an electric field created by a stripe-shaped electrode were also studied [37]. The results of the analysis of the properties of domain structures in the electric field of a charged electrode are presented below.…”

Section: Resultsmentioning

confidence: 99%

“…Voltage at the needle is 1500 V. The two branches correspond to two adjacent domain walls [32]. À250 À200 À150 À100 À50 paper [37], the results of experiments performed on an irongarnet film with a system of strip palladium electrodes applied by the photolithographic method onto its surface are described. A high voltage was applied between the electrode and the substrate; observations of the micromagnetic structure of the sample were performed by the magnetooptical method in the transmitted light (Fig.…”

Section: Resultsmentioning

confidence: 99%

“…It can be supposed that the most clearly pronounced effect of an electric field would be manifested during its influence on clusters of Bloch lines, in which the total angle of the magnetization rotation is Np, where N is the number of lines in the cluster. Such clusters are formed during the motion of a domain wall [51,53]; the switching of the direction of the magnetization rotation in the domain wall under the action of an electric field [37,78]; the pinning of magnetic domain walls at the ferroelectric domain walls in multiferroics [84,85] and the presence of a micromagnetic structure in the ferroelectric domain walls in multiferroics [86]; the nucleation of a magnetic inhomogeneity (including a domain wall [46]) under the action of an electric field. Under the conditions of experiments described in Section 2, the required electric fields are sufficiently large (by an order of magnitude higher than those usually employed in experiments), but they can be substantially lowered when working in the region near the spin-reorientation phase transitions [52]; the switching of the state of a magnetic nanoparticle from a vortex state to a uniform state (see Section 4.3) and to an antivortex [4,87] state; the stabilization of a single skyrmion in an electric field and electric action on the Bloch point (see Section 4.1).…”

Section: Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Micromagnetism and topological defects in magnetoelectric media

Pyatakov¹,

Сергеев²,

Николаева³

et al. 2015

Phys.-Usp.

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This paper briefly reviews research of the magnetoelectric materials and multiferroics as domain-structured media. The review is focused on magnetoelectric phenomena in epitaxial iron garnet films (electrically induced displacement and tilting of domain boundaries) as a striking example of magnetoelectricity in micromagnetism. The paper also considers the effect of an electric field on other topological defects in magnetically ordered media, including Bloch lines and Bloch points at domain boundaries, magnetic vortices, and skyrmions.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

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Micromagnetism and topological defects in magnetoelectric media

Pyatakov¹,

Сергеев²,

Николаева³

et al. 2015

Phys.-Usp.

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“…The coupling strength remains to be investigated, and depends on whether the DM interaction is stronger than the exchange energy penalty for matching the curl of the magnetisation to the curl of the polarisation across the DWs. It is likely that the exchange energy dominates, resulting in a wider magnetic DW mirroring the FE DW [59]. The magnetisation could even be locally enhanced if it does not invert with the FE polarisation [60].…”

Section: Resultsmentioning

confidence: 99%

Polar Vortexes and Charged Domain Walls in a Room Temperature Magnetoelectric Thin Film

Moore¹,

O’Connell²,

Keeney³

et al. 2020

Preprint

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Multiferroic domain walls are an emerging solution for future low-power nanoelectronics due to their combined tuneable functionality and mobility. Here we show that the magnetoelectric multiferroic Aurivillius phase Bi6TixFeyMnzO18 (B6TFMO) crystal is an ideal platform for domain wall-based nanoelectronic devices. The unit cell of B6TFMO is distinctive as it consists of a multiferroic layer between dielectric layers. We utilise atomic resolution scanning transmission electron microscopy and spectroscopy to map the sub-unit-cell polarisation in B6TFMO thin films. 180˚ charged head-to-head and tail-to-tail domain walls are found to pass through > 8 ferroelectric-dielectric layers of the film. They are structurally similar to BiFeO3 DWs but contain a large surface charge density (σ_s) = 1.09 |e|per perovskite cell, where |e| is elementary charge. Although polarisation is primarily in-plane, c-axis polarisation is identified at head-to-tail domain walls with an associated electromechanical coupling of strain and polarisation. Finally, we reveal that with controlled strain engineering during thin film growth, room-temperature vortexes are formed in the ferroelectric layer. These results confirm that sub-unit-cell topological features can play an important role in controlling the conduction properties and magnetisation state of Aurivillius phase films and other multiferroic heterostructures.

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“…In some micromagnetic structures all ligands are shifted in one direction, which leads to the appearance of macroscopic electrical polarization. In [8] it was shown that the most extensive class of candidates for the detection of magnetic vortices and anti-vortices includes the interfaces of magnetic and magnetoelectric superlattices.…”

Section: Introductionmentioning

confidence: 99%

Elementary excitations in anisotropic nanofilms of multiferroics with competing interactions at the interface

Sharafullin

Diep²

2020

Lett. Mater.

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In this work we study, using the of two-time Green's functions method, the spectrum of spin waves in a monolayer and bilayer of anisotropic magnetic film sandwiched between the ferroelectric layers in a magnetoelectric superlattice. Surface spin configuration is calculated by minimizing the interaction energy. It is shown that the angles between spins near the surface are strongly modified with respect to the bulk configuration. We include the anisotropy energy between the spin vectors at sites i and j in the Hamiltonian of multiferroic superlattice. The anisotropy energy stabilizes the angle between local quantization axes. The anisotropy parameter K i,j supposed positive, and nonzero only for the nearest interacting neighbors. It is shown that the magnetoelectric interaction strongly affects the long-wavelength mode of spin waves. The magnetization of the magnetic film at low temperatures was also calculated. The magnetization M is strongly dependent on temperatures: at higher T, the larger the magnetoelectric interaction, the greater is M. However, at T = 0, the spin length becomes smaller for large values of the magnetoelectric interaction due to the so-called spin reduction that takes place in antiferromagnets. As a result, the crossover (intersection) of the magnetization curves occurs for different values of θ at low T.

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Spin Structures and Domain Walls in Multiferroics Spin Structures and Magnetic Domain Walls in Multiferroics

Cited by 14 publications

References 45 publications

Micromagnetism and topological defects in magnetoelectric media

Micromagnetism and topological defects in magnetoelectric media

Polar Vortexes and Charged Domain Walls in a Room Temperature Magnetoelectric Thin Film

Elementary excitations in anisotropic nanofilms of multiferroics with competing interactions at the interface

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