Spin to charge conversion in chemically deposited epitaxial La_0.9MnO₃ thin films capped with Pt

Abstract

Spin to charge conversion process in a broad range of temperatures is studied in La0.92MnO3/Pt bilayers prepared by polymer-assisted deposition (PAD). It is shown that an excellent LMO/Pt interface can...

Spin-to-Charge Conversion in All-Oxide La2/3Sr1/3MnO3/SrIrO3 Heterostructures

“…Before proceeding with the LSMO/SIO system, the magnetodynamic properties and spin injection capability of LSMO were studied using the LSMO/Pt system and following the protocol employed in our previous publications on the subject , (see Figures S9 and S10 in the Supporting Information). FMR and ISHE measurements were performed by sweeping the externally applied magnetic field, H , in the microwave range from 2 to 16 GHz.…”

Tuning Stoichiometry for Enhanced Spin‐Charge Interconversion in Transition Metal Oxides

“…The ferromagnetic La 0.66 Sr 0.33 MnO 3 was opted as the spin‐current source layer due to the minimal spin rectification effects as compared to the highly conductive Py. [ 59 ] Considering the lattice mismatch, SrTiO 3 substrate was used to grow La 0.66 Sr 0.33 MnO 3, showing excellent ferromagnetic properties at room temperature (Figure S8, Supporting Information). We further demonstrate that SrIrO 3 on SrTiO 3 substrates also shows the similar structure changes by reducing the growth oxygen partial pressure, further suggesting that the control of Ir vacancies by growth is universal on different substrates (Figure S9, Supporting Information).…”

“…To assess the role of cation vacancy, we conducted spin pumping measurement [24,58,59] using all-oxide heterostructures comprised of La 0.66 Sr 0.33 MnO 3 (LSMO, 15 nm) and SrIr 1-x O 3 (SIO, 5 nm). The ferromagnetic La 0.66 Sr 0.33 MnO 3 was opted as the spin-current source layer due to the minimal spin rectification effects as compared to the highly conductive Py.…”

Tuning of Antiferromagnetic Phase in La1–xSrxMnO3 Epitaxial Thin Films by Polymer-Assisted Deposition Synthesis

“…As previously shown by our group, the PAD technique has been successfully used for the growth of high structural quality complex double perovskite oxide thin films, , and films with controlled surface and interfacial quality for their use in emergent spintronics applications relaying in flat sharp interfaces. , …”

“…As previously shown by our group, the PAD technique has been successfully used for the growth of high structural quality complex double perovskite oxide thin films, 7,8 and films with controlled surface and interfacial quality for their use in emergent spintronics applications relaying in flat sharp interfaces. 9,10 In particular, research on manganite oxides (R 1−x A x MnO 3 , where R = rare earth A = alkaline earth) in both bulk and thin film forms has garnered great interest due to their unique properties and potential applications. 11,12 The substitution of trivalent R by divalent A induces a mixed valence Mn 3+ /Mn 4+ state that, in the context of a remarkable interplay between electronic, orbital, structural, and magnetic degrees of freedom, drives to a wide diversity of structural, magnetic, and transport phases that compete or even coexist, inducing large responses to external stimuli as the celebrated colossal magnetoresistance.…”