Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Song, Kyungmi; Lee, Kyung Jin

doi:10.1063/1.4928205

Cited by 12 publications

(6 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A significant decrease of Δ was reported in the case of H k -degradation in an edge damage region. [34][35] Especially for the small MTJ less than 30 nm, these edge damage effects must be considered.…”

Section: Comparison With Experimental Datamentioning

confidence: 99%

Size dependence of the thermal stability factor in a perpendicular CoFeB/MgO magnetic tunnel junction studied by micromagnetic simulations

Yoshida

Tanaka

Ataka

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Size dependence of the thermal stability factor (Δ) for perpendicular CoFeB/MgO-based magnetic tunnel junctions (p-MTJs) was investigated using the string method in the framework of finite element micromagnetics. The simulation revealed that Δ showed significant size dependence, and the reversal mode changed from coherent rotation to domain wall (DW) motion as MTJ size increased. It also elucidated that Δ depended on the exchange stiffness constant in DW mediated reversal region. These Δ simulations can reproduce the experimental data and can be helpful for MTJ device design.

show abstract

Section: Comparison With Experimental Datamentioning

confidence: 99%

Size dependence of the thermal stability factor in a perpendicular CoFeB/MgO magnetic tunnel junction studied by micromagnetic simulations

Yoshida

Tanaka

Ataka

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Despite the promising intrinsic properties of CoFeB/MgO, patterned nanoscale devices introduce many complexities including finite size and surface effects, strong magnetostatic interactions and complex magnetization dynamics. Previous experimental [12][13][14] and micromagnetic studies [15][16][17] have concluded that the reversal mechanism is likely to be incoherent due to the large lateral size of the devices. However, the nature of the reversal mechanism and in particular the effects of the localised anisotropy induced at the CoFeB/MgO interface and of the temperature are currently unknown.…”

mentioning

confidence: 99%

Thermally nucleated magnetic reversal in CoFeB/MgO nanodots

Meo

Chureemart

Wang

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for reducing the power consumption given its non-volatile nature while achieving high performance. The dynamic properties and switching mechanisms of MTJs are critical to understanding device operation and to enable scaling of devices below 30 nm in diameter. Here we show that the magnetic reversal mechanism is incoherent and that the switching is thermally nucleated at device operating temperatures. Moreover, we find an intrinsic thermal switching field distribution arising on the sub-nanosecond time-scale even in the absence of size and anisotropy distributions or material defects. These features represent the characteristic signature of the dynamic properties in MTJs and give an intrinsic limit to reversal reliability in small magnetic nanodevices.

show abstract

“…During the fabrication process, other non-idealities such as edge damages 30 , 31 can be present in the MTJs. We introduced variations in interface anisotropy constant, width and length of the free layer of MTJs, to observe the effect of aforementioned non-idealities.…”

Section: Resultsmentioning

confidence: 99%

Analog Approach to Constraint Satisfaction Enabled by Spin Orbit Torque Magnetic Tunnel Junctions

Wijesinghe

Liyanagedera

Roy

2018

Sci Rep

View full text Add to dashboard Cite

Boolean satisfiability (k-SAT) is an NP-complete (k ≥ 3) problem that constitute one of the hardest classes of constraint satisfaction problems. In this work, we provide a proof of concept hardware based analog k-SAT solver, that is built using Magnetic Tunnel Junctions (MTJs). The inherent physics of MTJs, enhanced by device level modifications, is harnessed here to emulate the intricate dynamics of an analog satisfiability (SAT) solver. In the presence of thermal noise, the MTJ based system can successfully solve Boolean satisfiability problems. Most importantly, our results exhibit that, the proposed MTJ based hardware SAT solver is capable of finding a solution to a significant fraction (at least 85%) of hard 3-SAT problems, within a time that has a polynomial relationship with the number of variables(<50).

show abstract

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

Cited by 12 publications

References 22 publications

Size dependence of the thermal stability factor in a perpendicular CoFeB/MgO magnetic tunnel junction studied by micromagnetic simulations

Size dependence of the thermal stability factor in a perpendicular CoFeB/MgO magnetic tunnel junction studied by micromagnetic simulations

Thermally nucleated magnetic reversal in CoFeB/MgO nanodots

Analog Approach to Constraint Satisfaction Enabled by Spin Orbit Torque Magnetic Tunnel Junctions

Contact Info

Product

Resources

About