Spin—Valve and Spin—Tunneling Devices: Read Heads, MRAMs, Field Sensors

Anisotropic behaviour in the magnetic field dependence of the low temperature electrical resistance of calcium-doped lanthanum manganate thin films grown by RF magnetron sputtering

“…It would be interesting to investigate what happens when the current direction is perpendicular to the film plane, especially because the so-called CPP geometry is very common in manganite-based spin-tunneling heterostructures [6,9,41,42]. However, to the best of our knowledge, this case has not been extensively studied in the literature.…”

“…Thin films of these materials are especially studied for their potential technological applications, e.g. as magnetic sensors or in computer memory systems [5,6]. A comprehensive review of the literature concerning manganate thin films can be found in reference [7].…”

Magnetic properties of Ga-doped lanthanum manganite with controlled oxygen stoichometry

“…The large drop of the electrical resistance upon application of a magnetic field could have potential applications (for example in magnetic sensors or in computer memory systems) [3] and these materials have attracted considerable attention and research. CMR usually occurs in compounds with formula Ln 1-x A x MnO 3+/-, where Ln is a lanthanide, A is generally an alkaline-earth and manganese has a mixed oxidation state Mn 3+ /Mn 4+ .…”

“…In the second case [9][10][11], the doping cation interferes with the superexchange interactions present in the LnMnO 3 parent compounds. In this work we have chosen to study the gallium substitution on the manganese site of LaMnO 3 . Since gallium has the same 3+ charge as manganese in LaMnO 3 [12,13].…”