Spin valve effect in VN/GaN/VN van der Waals heterostructures

Ye, Haoshen; Zhu, Yijie; Bai, Dongmei; Zhang, Junting; Wu, Xiaoshan; Wang, Jianli

doi:10.1103/physrevb.103.035423

Cited by 28 publications

(21 citation statements)

References 57 publications

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“…Nearly all contributions arise from the interaction between d xy orbital and d x 2 Ày 2 orbital, which is not changed by strain. According to the second-order perturbation theory of SOC interaction [65,66], MAE can be approximately expressed as:…”

Section: Resultsmentioning

confidence: 99%

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

et al. 2021

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The room-temperature intrinsic ferromagnetism of monolayer VSe 2 with a van der Waals gap provides an exciting opportunity for both the fundamental studies and future low-dimensional spintronic devices. By applying biaxial strain, the tunable electronic, magnetic, and phonon transport properties of the VSe 2 monolayer are systematically investigated via first-principle calculations. With in-plane easy magnetization axis, the VSe 2 monolayer is always a robust room-temperature ferromagnetic semiconductor in the strain range from -2 to 4%. According to the second-order perturbation theory of spin-orbital coupling, magnetic anisotropy energy is mainly contributed by the interaction between Vd xy orbital and V-d x 2 Ày 2 orbital. The Curie temperature increases significantly with increasing biaxial strain, from 303 to 469 K. In the meantime, room-temperature lattice thermal conductivity is only 0.682 Wm -1 K -1 and exhibits strong strain dependence. The weakened anharmonic three-phonon scattering rate due to the tradeoff between the number and the strength of scattering channel largely compensates for the influence of the reduced phonon group velocity, causing a monotonous increase in the lattice thermal conductivity with the strain changing. Moreover, the lattice thermal conductivity can be reduced further by limiting the size of monolayer under tensile strain, due to the enhanced size dependence of the thermal conductivity.

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Section: Resultsmentioning

confidence: 99%

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

et al. 2021

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“…1(a)] with two gated terminals linked by the central scattering region to realize a fully electrically controlled spin valve. Its operation mechanism is similar to that of existing giant MR devices [3][4][5][6][7][8][9][10], with the difference that it does not require magnetic field: By altering the mutual bias orientation in the two terminals, from P to AP, the MR of in-plane transport varies significantly. Due to the magneto-electric coupling [Fig.…”

Section: Introductionmentioning

confidence: 84%

Electrically Controllable van der Waals Antiferromagnetic Spin Valve

Zhai,

Cui,

Zhu

et al. 2021

Preprint

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We propose a spin valve that is based on van der Waals antiferromagnetism and fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering potential region. The magnetoresistance varies significantly when the bias orientations in two terminals are switched from parallel to antiparallel because this switch induces a mismatch of the bands for the same spin projection in different parts of the system. It is shown from density functional calculations that bilayer graphene encapsulated by two atomic layers of Cr 2 Ge 2 Te 6 provides a material platform to realize the antiferromagnetism, which is robust against the required vertical electric fields.

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“…two gated terminals linked by the central scattering region to realize a fully electrically controlled spin valve. Its operation mechanism is similar to that of existing giant MR devices [3][4][5][6][7][8][9][10], with the difference that it does not require a magnetic field: by altering the mutual bias orientation in the two terminals, from P to AP, the MR of in-plane transport can be varied significantly. Due to the magneto-electric coupling [Fig.…”

Section: Introductionmentioning

confidence: 92%

“…In the past decade, the spin valve has also attracted much attention in two-dimensional (2D) materials (see, e.g., Refs. [4][5][6][7][8][9][10]), which have easily tunable electronic properties.…”

Section: Introductionmentioning

confidence: 99%

“…Our proposed LAF spin valve has three advantages over the usual spin valves [3][4][5][6][7][8][9][10]: (i) It is robust against environmental perturbations from magnetic or null-stray fields due to antiferromagnetism [18][19][20]; (ii) it requires only a small vertical bias to control, is reversible to operate, and is superior to traditional magnetic control [3]; and (iii) it is not sensitive to the presence of domain walls (DWs), thus enabling the device to possess strong antijamming of DWs. The two latter points are not trivial and we demonstrate their validity here.…”

Section: Introductionmentioning

confidence: 99%

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Electrically Controllable Van Der Waals Antiferromagnetic Spin Valve

Zhai

Cui

et al. 2021

Phys. Rev. Applied

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We propose a spin valve that is based on van der Waals antiferromagnetism and is fully electrically controlled. The device is composed of two antiferromagnetic terminals that allow for vertical bias control and a linked central scattering potential region. The magnetoresistance varies significantly when the bias orientations in two terminals are switched from parallel to antiparallel, because this switch induces a mismatch of the bands for the same spin projection in different parts of the system. It is shown from density-functional calculations that bilayer graphene encapsulated by two atomic layers of Cr 2 Ge 2 Te 6 provides a material platform to realize the antiferromagnetism, which is robust against the required vertical electric fields.

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Spin valve effect in VN/GaN/VN van der Waals heterostructures

Cited by 28 publications

References 57 publications

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

Magnetic and phonon transport properties of two-dimensional room-temperature ferromagnet VSe2

Electrically Controllable van der Waals Antiferromagnetic Spin Valve

Electrically Controllable Van Der Waals Antiferromagnetic Spin Valve

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