Spin-valve read heads with NiFe/Co/sub 90/Fe/sub 10/ layers for 5 Gbit/in/sup 2/ density recording

Kanai, H.; Yamada, Kazuhiko; Aoshima, Ken-ichi; Ohtsuka, Y.; Kane, J.; Kanamine, M.; Toda, J.; Mizoshita, Y.

doi:10.1109/20.538628

Cited by 65 publications

(20 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A combination of a large MR and a small hyster esis was obtained, e.g., in [17] while solving the prob lem of the creation of sensing heads of hard disks using spin valves as the magnetically sensing elements. It has been established in [17] that the deposition of a com posite free layer consisting of permalloy and Co 90 Fe 10 alloy leads to the formation in the layers of the spin valve of an ͗111͘ crystallographic texture, which favors a decrease in the hysteresis. For the optimized spin valves, a value of MR equal to 8% has been obtained in [17] at the width of the free layer hysteresis loop equal to 4 Oe.…”

Section: Introductionmentioning

confidence: 99%

High-sensitive hysteresisless spin valve with a composite free layer

Ustinov

Milyaev

Наумова

et al. 2012

Phys. Metals Metallogr.

View full text Add to dashboard Cite

Method of dc magnetron deposition has been used to prepare metallic nanostructures of the (Si, Al 2 O 3 , glass)/Ta/[NiFe/CoFe]/Cu/CoFe/(FeMn, MnIr)/Ta spin valve type with a composite "free layer" Ni 80 Fe 20 /Co 90 Fe 10 . A three stage method of decreasing hysteresis of the free layer has been suggested. The dependence of the magnitude of the giant magnetoresistance and hysteresis has been investigated depending on the angle between the direction of the easy magnetization axis of the free layer and the direction of the applied magnetic field in the plane of layers. It is shown that in the spin valves studied the hysteresis can be reduced to a few tenths of an oersted at the magnitude of the magnetoresistance more than 8%. In the case of a spin valve with an antiferromagnet Fe 50 Mn 50 the magnetoresistive sensitivity in the range of the hystere sisless variation of the magnetoresistance was equal to 1%/Oe, whereas the maximum sensitivity in the pres ence of a hysteresis exceeded 6%/Oe. A greater sensitivity (2.5%/Oe) at the magnitude of the free layer hys teresis of 0.6 Oe was obtained for spin valves on the basis of the antiferromagnetic Mn 75 Ir 25 alloy. For them, the maximum magnetoresistance was equal to 11.6%.

show abstract

Section: Introductionmentioning

confidence: 99%

High-sensitive hysteresisless spin valve with a composite free layer

Ustinov

Milyaev

Наумова

et al. 2012

Phys. Metals Metallogr.

View full text Add to dashboard Cite

show abstract

“…The sample structure we used is Ta (10 nm) / NiFe (6 nm) / CoFe (1.5 nm) /Cu (3.6 nm)/ CoFe (5.5 nm)/ FeMn (lonm) / Ta (10 nm) [3]. These films were deposited on AI203TiC substrates using DC or RF magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

AMR effect in spin-valve structure

1996

Self Cite

View full text Add to dashboard Cite

It i s very important t o estimate the a n i s o t r o p i c magnetoresistance (AMR) effects i n a spin-valve structure when designing spin-valve h e a d s . The AMR e f f e c t i n a free l a y e r can have an e s p e c i a l l y significant influence on head properties. We measured the change i n resistance i n s p i n -v a l v e f i l m s and separated the AMR s i g n a l from the total change i n resistance using an improved means o f measurement. With this measurement, we directly obtained the AMR effect o n the free layer. The sample structure we used was NiFe / CoFe / Cu / CoFe I FeMn. The AMR effect was about 1 6 % of the S V effect. This value i s rather large and can affect the head p r o p e r t i e s .

show abstract

“…PIN-VALVE (SV) heads are promising candidates for S high density magnetic recording, because of their high sensitivity characteristics [1]- [3]. For practical use, it is very important to achieve a stable magnetization in the pinned layer, which is fixed along the transverse direction by exchdnge coupling with an antiferromagnetic layer, because t h s strongly influences read performance.…”

Section: Introductionmentioning

confidence: 99%

Anisotropy control in fabrication process for NiMn spin-valve dual element heads

et al. 1998

Self Cite

View full text Add to dashboard Cite

NiMn antiferromagnets with a high blocking temperature are attractive for application to the pinning layer in spin-valve heads, because a highly stable exchange coupling field is expected through their use. We have fabricated NiMn spinvalve heads having a CoZrTa bottom shield and a CoZrTaNiFe write element, using an anisotropy control process which provides a desirable magnetization configuration in each magnetic layer. These heads showed highly stable, symmetrical, and Barkhausen noise free readback waveforms with output voltage of over 800 pV,&m.

show abstract

Spin-valve read heads with NiFe/Co/sub 90/Fe/sub 10/ layers for 5 Gbit/in/sup 2/ density recording

Cited by 65 publications

References 9 publications

High-sensitive hysteresisless spin valve with a composite free layer

High-sensitive hysteresisless spin valve with a composite free layer

AMR effect in spin-valve structure

Anisotropy control in fabrication process for NiMn spin-valve dual element heads

Contact Info

Product

Resources

About