Spin wave wavevector up-conversion in Y-shaped Permalloy structures

Abstract

Spin waves in micrometer-sized, patterned Y-shaped Permalloy structures were studied using micro-focus Brillouin light scattering (BLS) with a magnetic field applied in-plane. For in-plane magnetized thin films and microstrips, the dispersion relations depend on the angle of the magnetization with respect to the microstrip axis. BLS measurements show that spin waves generated in the two arms that form the top of the Y structure can be channeled into a longer magnetic microstrip that forms the base when the applied field is oriented perpendicular to the long axis of the base. In this configuration, the base supports surface spin waves. A comparison of the BLS data with micromagnetic simulations reveals that low-k spin waves generated by a microstrip antenna in the arms are converted to higher-k spin waves in the base, which may be useful for nanomagnonic applications.

Enhanced Ferroelectricity in Hf‐Based Ferroelectric Device with ZrO2 Regulating Layer

“…[ 11 ] However, its low remnant polarization intensity and high annealing temperature have restricted its further development. [ 12 ] In order to improve the remanent polarization intensity of Hf‐based ferroelectric materials, researchers generally insert an interface layer between the electrode and the ferroelectric layer, such as TiO 2 , [ 13,14 ] Al 2 O 3 , [ 15,16,17 ] HfO 2 , [ 18 ] ZrO 2 , [ 19,20 ] La 2 O 3 , [ 21 ] CeO x , [ 22 ] etc. Among them, there are reported works on the performance improvement of ZrO 2 layer in memory [ 23–25 ] and ZrO 2 has good lattice matching effect with HfO 2 , which was suitable as insert layer for improving performances of Hf‐based devices.…”

Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors

“…Overall, introducing an ultrathin interlayer into an HZO‐based capacitor might be beneficial for leakage and endurance properties, as formerly reported by several authors, [ 16–18 ] but other reliability concerns like retention and imprint need to be critically evaluated.…”

“…Former publications started to characterize the impact of interlayers in HZO. [ 12,16–18 ] As a main result, ultrathin Al 2 O 3 interface layers, having a thickness of ≈1 nm, at the top or bottom interface to the electrodes were shown to reduce leakage and enhance field cycling endurance, but detailed studies on retention and degradation mechanisms are missing. In an initial work on La 2 O 3 in comparison to Al 2 O 3 interlayers, La 2 O 3 was found to be more beneficial than the corresponding Al 2 O 3 layers for reliability improvement.…”

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

“…Several industries are devoting their efforts to making it commercial. [ 29 ] However, the literature on HfO 2 shows the operating SET and RESET voltage is a little bit high with a low resistance ON/OFF ratio. [ 30–32 ] Therefore, doping zirconium into the HfO 2 may be more suitable for achieving the low power consumption ReRAM device.…”