Spinodal-like decomposition of grown by gas source molecular beam epitaxy

LaPierre, Ray; Okada, Takeshi; Robinson, B. J.; Thompson, D.A.; Weatherly, G. C.

doi:10.1016/0022-0248(95)00123-9

Cited by 69 publications

(51 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The PL line full widths at halfmaximum (FWHM) were 46 meV and 13 meV at room temperature and at 10 K, respectively. These observed FWHMs are similar to those in other reports for high-quality InGaAsP layers with similar III-V compositions [2,11,12].…”

Section: Methodssupporting

confidence: 93%

“…A central topic of spintronics is the understanding of the electron spin relaxation in semiconductors. In 1Àx Ga x As y P 1Ày lattice-matched to InP has the advantage of wide tunablity of the band gap in the range from 0.92 to 1.65 mm by changing the composition (x and y) of the solid solution and offers great promise for fabricating multijunction solar cells with high efficiency [2][3][4]. Recently, we reported that an InGaAsP-based single-junction photovoltaic device with a band gap of 1.0 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectrum [5].…”

mentioning

confidence: 99%

See 1 more Smart Citation

Observation of picosecond electron spin relaxation in InGaAsP by time‐resolved spin‐dependent pump and probe reflection measurement

Harasawa

Yamamoto

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

We have investigated the electron spin relaxation in undoped InGaAsP grown on an InP substrate. Time-resolved spin-dependent pump and probe reflection measurements revealed a spin relaxation behavior between 10 and 300 K. We have observed the electron spin relaxation times of 980 ps at 10 K and 95 ps at room temperature. The observed presence of the carrier density dependence and the weak temperature dependence of spin relaxation time imply that the Bir-Aronov-Pikus (BAP) process is effective at 10-30 K. At 100-300 K, the observed presence of the temperature dependence and the absence of the carrier density dependence of spin relaxation time indicate that the D'yakonov-Perel' (DP) and Elliott-Yafet (EY) processes are effective.

show abstract

Section: Methodssupporting

confidence: 93%

mentioning

confidence: 99%

Observation of picosecond electron spin relaxation in InGaAsP by time‐resolved spin‐dependent pump and probe reflection measurement

Harasawa

Yamamoto

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…The details of the growth procedures are described elsewhere [6,14]. The evaporation sources are used for the group III elements (In and Ga), while the group V constituents are supplied primarily in the form of AsH 3 and PH 3 .…”

Section: Methodsmentioning

confidence: 99%

“…Early studies, in samples grown by liquid phase epitaxy, suggested that the composition modulations always occurred in 0 0 1 hi directions [1,2]. However, later studies have shown that the composition modulation in thin films grown by vapor deposition on solid substrates occurs along 0 1 1 hi directions, not the elastically soft 0 0 1 hi directions, and is anisotropic between [0 1 1] and ½0 % 1 11 directions [4][5][6][7]. The presence of a composition modulation also depends on the sign of strain built into the strained layer: the composition modulation in a film under tension is much stronger than that in a film grown under compression but with the same stress magnitude [8].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Composition modulations in tensile strained In1−xGaxAsyP1−y films grown on (100) InP substrates

Weatherly

2001

Journal of Crystal Growth

View full text Add to dashboard Cite

Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Composition modulations in tensile strained In1-xGxAsyP1-y films grown on (1 0 0 ) InP substrates Wu, X.; Weatherly, G. C.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744459&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744459&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1016/S0022-0248(01)01574-3 Growth, 233, 1, pp. 88-98, 2001 Journal of Crystal Growth 233 (2001) Journal of Crystal AbstractThe correlation between compositional modulations and surface morphology has been studied by transmission electron microscopy (TEM) and atomic force microscopy (AFM) for a series of tensile strained In 1Àx Ga x As y P 1Ày films grown by molecular beam epitaxy (MBE) on (1 0 0) InP substrates. At low values of strain (0.6%), both a quaternary In 0.65 Ga 0.35 As 0.6 P 0.4 film and ternary In 0.45 Ga 0.55 As film show anisotropic behavior (both with regards to composition modulation and surface morphology) between [0 1 1] and ½0 % 1 11 cross-sections. The composition modulation and surface undulation are prominent only in the ½0 % 1 11 cross-section. The In 0.45 Ga 0.55 As films develop a coarse faceted structure on (4 1 1) and 4 % 1 1 % 1 1 ÀÁ planes after B100 nm of film growth. Composition modulations (scaling with the size of the facets) are observed in films 0.1-1 mm thick, but in thicker films (>1 mm) the faceted structure disappears while the scale of the compositional modulations decays to that found in unstrained films. On...

show abstract