Spintronic with semiconductors

Imaging the antiparallel magnetic alignment of adjacent Fe and MnAs thin films

“…The complex microstructural and magnetic behavior of metallic MnAs films epitaxially grown on GaAs(001) has been the object of many investigations over the last decade [1]. Indeed, MnAs electrodes, like Fe and FeCo ones, can provide a spin-polarized source for achieving spin injection [2] and tunnel magnetoresistance in GaAs-based spintronic devices [3]. Interestingly, MnAs films display, at room temperature (RT), a self-organized pattern of submicron-wide stripes, alternating the ferromagnetic hexagonal α-MnAs phase with the non-ferromagnetic orthorhombic β-MnAs phase.…”

Persistent photoconductivity phenomena in GaMnAs grown via molecular beam epitaxy

“…Since discovering ferromagnetism in III-V semiconductors, compound doped with magnetic Mn ions GaMnAs have been considered promising materials for the design of spintronics devices and structures owing to their compatibility with existing III-V heterostructures technology and combination of the ferromagnetic and semiconducting properties [1][2][3][4]. In recent years, the possibilities of realizing spin polarized light source (light emission diodes [5] and lasers [6]), magnetic tunnel junction [7][8][9][10], and detectors on the basis of GaMnAs/III-V semiconductor heterostructures have been successfully demonstrated.…”

Spin-birefringence in molecular currents: Tellurium and gold complexes

“…Although such a combination has been mostly studied in the context of inorganic semiconductors [3,4], the possible use of other materials in spintronics, e.g., p conjugated semiconductor, organometallic, molecular wire, and atomic carbon wire, DNA molecular monolayer and carbon nanotubes [5][6][7][8][9][10], has also been explored considerably in the past few years, leading to molecular spintronics. Recently, the use of spinpolarized graphene has also attracted much attention [11].…”