Spintronics in GaN and Related Materials

Pearton, S. J.; Abernathy, C. R.; Park, Y. D.; Zavada, J. M.

doi:10.1002/chin.200739229

Cited by 4 publications

(5 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Section: Discussionmentioning

confidence: 99%

“…The GaN is a crystal of high bond energy that is equal to 7.72 eV/molecule, which results in higher melting temperature and good thermal stability. 27 Hence, the bulk must resort to high temperature and high pressure. In semiconductor-manufacturing industry, high-quality GaN are synthesized by metal organic vapor-phase epitaxy (MOVPE), molecular beam epitaxy (MBE), MOCVD, and hydride vapor-phase epitaxy (HVPE) technique.…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Recycling of GaN, a Refractory eWaste Material: Understanding the Chemical Thermodynamics

Swain

Mishra

Lee

et al. 2015

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

South Korea is a major producer of light‐emitting diode (LED) material, contributing 31% of total LED demand worldwide, and also a major consumer of electronic devices. During manufacturing and after end of life (EOL) of the consumer electronics, significant amount of GaN‐bearing waste is being generated. As the Republic of Korea depends upon the import of all mineral commodities, under the national policy of securing a stable supply, much attention has been paid to the notion of “urban mining.” The stringent international environmental directive for recycling of waste electrical and electronic equipment (WEEE), United Nations Environment Programme (UNEP) E‐Waste Management goal, restriction of the use of hazardous substances in EEE (RoHS), and extended producer responsibility (EPR) have made recycling an important responsibility. Recovery of the gallium from GaN‐bearing waste can be a promising feasible option; simultaneously from the waste, the wealth can be generated. As GaN is a refractory material, which is hard to leach in the recovery process, hence, needs a chemical pretreatment. In this study, thermodynamics of GaN oxidation and oxidative roasting using Na2CO3 has been studied. Thermodynamic feasibility for leaching of oxidized GaN either through acidic leaching or through alkali leaching has been explored.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Recycling of GaN, a Refractory eWaste Material: Understanding the Chemical Thermodynamics

Swain

Mishra

Lee

et al. 2015

Int J Applied Ceramic Tech

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5] In particular, they exhibit a largely tunable and direct energy band-gaps (from 0.7 eV for InN, to 3.4 eV for GaN, to 6.2 eV for AlN at room temperature), allowing the fabrication of highly efficient light emitting devices (LEDs). Green and blue LEDs based on nitrides have become a mature technological platform.…”

Section: Introductionmentioning

confidence: 99%

Sub-250 nm light emission and optical gain in AlGaN materials

Pecora

Zhang

Nikiforov

et al. 2013

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Due to low solubility of nitrogen in gallium and high vapor pressure of nitrogen on GaN, the native substrate of GaN is not available in large quantities. The GaN is a crystal of high bond energy that is equal to 7.72 eV/molecule, which results in higher melting temperature and good thermal stability [8]. Explained technique reduces dislocation densities in their crystal structure; make the GaN a refractory material having a wide band gap [9].The compound gallium nitride (GaN) is used as a semiconductor in Blu-ray technology, mobile phones and pressure sensors for touch switches [4].…”

Section: Introductionmentioning

confidence: 99%

Recycling the Gan Waste from LED Industry by Pressurized Leaching Method

Chen¹,

Hsu

Wang

2018

Preprint

View full text Add to dashboard Cite

In recent years, with the increasing research and development of the LED industry which contains GaN, it is expected that there will be a large amount of related wastes in the future. Especially the gallium has extremely high value of economic, therefore, it is necessary to establish the recycling system of the GaN waste. However, GaN is a direct-gap semiconductor and with high energy gap, high hardness, and high melting point make it difficult to recycle. Therefore, this study will analyze the physical characteristics of LED wastes containing GaN and carry out various leaching method to leach the valuable metals from the waste optimally. Different acids are used to find out the best reagent for leaching the gallium. Different experimental parameters are discussed such as the effect of the different acid agents , concentration, pressure, solid-liquid mass ratio, temperature, and time which influence the leaching efficiency of the gallium. In this study, various leaching methods which effect the leaching efficiency of the gallium are compared and the advantages and disadvantages are discussed. Finally, pressurized acid leaching method is preferred to leach the GaN waste, and hydrochloric acid is used as the leaching solution because of its better leaching efficiency of gallium. Eventually, the leaching efficiency of the gallium can reach to 98%.

show abstract

Spintronics in GaN and Related Materials

Abstract: ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 200 leading journals. To access a ChemInform Abstract, please click on HTML or PDF.

Cited by 4 publications

References 0 publications

Recycling of GaN, a Refractory eWaste Material: Understanding the Chemical Thermodynamics

Recycling of GaN, a Refractory eWaste Material: Understanding the Chemical Thermodynamics

Sub-250 nm light emission and optical gain in AlGaN materials

Recycling the Gan Waste from LED Industry by Pressurized Leaching Method

Contact Info

Product

Resources

About