Spintronics technology and device development

Ando, Yasuo

doi:10.7567/jjap.54.070101

Cited by 32 publications

(13 citation statements)

References 83 publications

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“…The spin Hall effect (SHE) has attracted interest due to its potential application in devices requiring the generation of spin currents such as magnetic random access memory (MRAM) [1][2][3]. The spin currents generated via SHE in nominally non-magnetic materials can be exploited to switch the active magnetic layer.…”

Section: Introductionmentioning

confidence: 99%

Spin-dependent transport in uranium

Rossignol

Gradhand

2020

Phys. Rev. B

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Given the challenges in experimental studies of uranium, the heaviest naturally occurring metal, we present first-principles calculation for the spin-dependent transport. Showing the largest atomic spin-orbit coupling we explore the ability of various crystal phases to maximise the charge to spin conversion using a full relativistic Korringa-Kohn-Rostoker Greens function method. The transport theory is based on a semi classical description where intrinsic and extrinsic, skew scattering, contributions can be separated easily. In addition to the various crystal phases we analyse the effect of substitutional impurities for γ, hcp, as well as the α-phase. We predict a very high, 10 4 (Ωcm) −1 , spin Hall conductivity for the meta-stable hcp-U phase, a giant value 5 times larger than for the conventional spin Hall material Pt. We estimated an efficiency of charge-to-spin current conversion of up to 30%. The spin diffusion length, a crucial parameter in any application, is predicted to be in the range from 3 − 6.5nm, compatible with other charge-to-spin conversion materials. Relating our work to the sparse experimental results, our calculations suggest a γ phase in the thin film rather than the experimentally expected α phase.

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Section: Introductionmentioning

confidence: 99%

Spin-dependent transport in uranium

Rossignol

Gradhand

2020

Phys. Rev. B

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“…During the past two decades, the field of magnetoelectronics and spintronics has experienced significant development [1][2][3]. Half-metals have the potential to play an important role in the continuing development of spintronics because they have a gap in the Density of States (DOS) at the Fermi energy for one of the spin-channels, but not for the other, creating an opportunity to achieve 100% spin-polarized currents [4,5].…”

Section: Introductionmentioning

confidence: 99%

Computational investigation of inverse Heusler compounds for spintronics applications

Mazumdar

et al. 2018

Phys. Rev. B

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First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula X2YZ are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for Y exceed that for X and for which X is one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, or Cu; Y is one of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn; and Z is one of Al, Ga, In, Si, Ge, Sn, P, As or Sb were considered. The formation energy per atom of each compound was calculated. By comparing our calculated formation energies to those calculated for phases in the Inorganic Crystal Structure Database (ICSD) of observed phases, we estimate that inverse-Heuslers with formation energies within 0.052 eV/atom of the calculated convex hull are reasonably likely to be synthesizable in equilibrium. The observed trends in the formation energy and relative structural stability as the X, Y and Z elements vary are described. In addition to the Slater-Pauling gap after 12 states per formula unit in one of the spin channels, inverse-Heusler phases often have gaps after 9 states or 14 states. We describe the origin and occurrence of these gaps. We identify 14 inverse-Heusler semiconductors, 51 half-metals and 50 near half-metals with negative formation energy. In addition, our calculations predict 4 half-metals and 6 near half-metals to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for future spintronics applications.

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“…In Fig. (2) the results are summarized for a Cu thin film with Pt impurities, Cu(Pt) as well as the inverted system with Cu impurities in a Pt thin film, Pt(Cu). The materials were chosen as Pt is known to exhibit a large intrinsic spin Hall conductivity and is one of the standard charge to spin as well as spin to charge conversion materials [37][38][39].…”

Section: Resultsmentioning

confidence: 99%

“…The spin-orbit torque, a spin dynamics effect intimately connected to the spin-orbit coupling (SOC), has been widely investigated for its promising technological applications, [1][2][3][4][5]. For any practical application devices are built in stacks of thin films from multiple materials, which leads not only to spin currents but spin accumulation at the interface.…”

Section: Introductionmentioning

confidence: 99%

Electronic Impurity Scattering Induced Spin Accumulation in Metallic Thin Films

Wu,

Fabian,

Gradhand

2021

Preprint

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Spintronics technology and device development

Cited by 32 publications

References 83 publications

Spin-dependent transport in uranium

Spin-dependent transport in uranium

Computational investigation of inverse Heusler compounds for spintronics applications

Electronic Impurity Scattering Induced Spin Accumulation in Metallic Thin Films

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