2006
DOI: 10.1016/j.jcrysgro.2006.07.018
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Spiral formation during Czochralski growth of rare-earth scandates

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Cited by 95 publications
(71 citation statements)
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“…This lifting of T max location increases the melt velocity and as a result thermal convection of the molten material, i.e. In Czochralski growth of various kinds of oxide single crystals such as scandates (DyScO 3 and SmScO 3 ), peculiar growth morphology so-called "spiral" or "footing" growth sometimes appears, even when the growth parameters are well controlled [7]. Particularly, it has been observed that the spiral growth started at early stages of the pulling, when the melt level in a crucible decreased.…”
Section: Temperature and Flow Fieldmentioning
confidence: 99%
“…This lifting of T max location increases the melt velocity and as a result thermal convection of the molten material, i.e. In Czochralski growth of various kinds of oxide single crystals such as scandates (DyScO 3 and SmScO 3 ), peculiar growth morphology so-called "spiral" or "footing" growth sometimes appears, even when the growth parameters are well controlled [7]. Particularly, it has been observed that the spiral growth started at early stages of the pulling, when the melt level in a crucible decreased.…”
Section: Temperature and Flow Fieldmentioning
confidence: 99%
“…The crystals ranging from DyScO 3 to PrScO 3 are grown by the conventional Czochralski technique [8,9].…”
Section: Introductionmentioning
confidence: 99%
“…Rare-earth scandate (REScO 3 ) substrates have been recently developed with the larger lattice constants of ferroelectric and multiferroic perovskites in mind. [280][281][282][283][284] In addition to appropriate substrate single crystals, a method to prepare substrates with a specific chemical termination of the surface is a prerequisite for atomic-layer-controlled thin film growth of epitaxial heterostructures. For example, chemical-mechanically polished (001) SrTiO 3 substrates display a mixture of SrO and TiO 2 terminated surfaces.…”
Section: Integration Of Oxides (1) Substrates and Substrate Prepamentioning
confidence: 99%