Split-Gate Flash Memory: from Planar to 3D

Chandra, Zefanya; Mubarokah, Ita; Sulthoni, Muhammad Amin

doi:10.1109/isesd53023.2021.9501739

2021 International Symposium on Electronics and Smart Devices (ISESD) 2021

DOI: 10.1109/isesd53023.2021.9501739

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Split-Gate Flash Memory: from Planar to 3D

Zefanya Chandra

Ita Mubarokah

Muhammad Amin Sulthoni

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2024

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Cited by 2 publications

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Structure and Formation of Superflash Nonvolatile Memory Cells

Abdullaev,

Bobrova,

Milovanov

2024

Russ Microelectron

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Structure and Formation of Superflash Nonvolatile Memory Cells

Abdullaev,

Bobrova,

Milovanov

2024

Russ Microelectron

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The structure and formation of non-volatile memory cells of Superflash

Abdullaev,

Bobrova,

Milovanov

2024

Mikroèlektronika

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Split-gate embedded Flash memory technology has been around for decades and has become the standard for a wide range of devices, such as microcontrollers and smart cards. Among the, due to a number of advantages, Silicon Storage Technology Super Flash non-volatile memory technology has become the most widespread. This article presents the results of a study of the memory cells structure, examines in detail the principle of their operation and the main technological stages of the production process of forming transistor structures.

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Split-Gate Flash Memory: from Planar to 3D

Cited by 2 publications

References 15 publications

Structure and Formation of Superflash Nonvolatile Memory Cells

Structure and Formation of Superflash Nonvolatile Memory Cells

The structure and formation of non-volatile memory cells of Superflash

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