2008
DOI: 10.1002/smll.200801074
|View full text |Cite
|
Sign up to set email alerts
|

Spontaneous Formation of Vertical Magnetic‐Metal‐Nanorod Arrays During Plasma‐Enhanced Atomic Layer Deposition

Abstract: A novel fabrication method of Co and Ni metal nanorods (NRs) without catalyst or template, based on the spontaneous formation of NRs during plasma-enhanced atomic layer deposition (PE-ALD) is developed. Pure Co and Ni NRs 9-10 nm in diameter are synthesized on SiO(2) and Si substrates by using metal-organic precursors and an NH(3) plasma mixed with a suitable amount of SiH(4) as a reactant. The lengths of the NRs are controlled on the nanometer scale by changing the number of PE-ALD growth cycles. Superconduct… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
16
0

Year Published

2009
2009
2021
2021

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 37 publications
(16 citation statements)
references
References 34 publications
0
16
0
Order By: Relevance
“…Further information on chamber configuration can be found in our previous report [6]. Co(iPr-AMD) 2 and Ni(dmamb) 2 were contained in stainless steel and glass bubblers, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…Further information on chamber configuration can be found in our previous report [6]. Co(iPr-AMD) 2 and Ni(dmamb) 2 were contained in stainless steel and glass bubblers, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…The precise control of the thickness of the ALD layers combined to the high step coverage permitted to introduce new approaches for nanostructure fabrication 13–26. For instance, using nanopaterning by area selective ALD,27 porous28 and nanostructured templates,29 novel nanostructured materials can be elaborated by ALD.…”
Section: Nanostructure Fabricationmentioning
confidence: 99%
“…In particular, ALD is a precise technique for the decoration of the passivation layer with preferable advantages including controlled interface, remarkable uniformity, and efficient thickness control. Currently, a large number of materials are being prepared through the ALD process such as dielectric absorbers (ZnO, Al 2 O 3 , ZrO 2 ), and magnetic absorbers (Ni, Fe 3 O 4 , NiFe 2 O 4 ) [30][31][32][33]. It is considered an accurate technology to design dielectric/ magnetic composites with outstanding microwave absorption performances by adjusting the permittivity and permeability.…”
Section: Introductionmentioning
confidence: 99%