The presence of a natural silicon
oxide (SiO
x
) layer over the surface of
silicon (Si) has been a roadblock
for hybrid semiconductor and organic electronics technology. The presence
of an insulating oxide layer is a limiting operational factor, which
blocks charge transfer and therefore electrical signals for a range
of applications. Etching the SiO
x
layer
by fluoride solutions leaves a reactive Si–H surface that is
only stable for few hours before it starts reoxidizing under ambient
conditions. Controlled passivation of silicon is also of key importance
for improving Si photovoltaic efficiency. Here, we show that a thin
layer of graphene oxide (GO
x
) prevents
Si surfaces from oxidation under ambient conditions for more than
30 days. In addition, we show that the protective GO
x
layer can be modified with molecules enabling a functional
surface that allows for further chemical conjugation or connections
with upper electrodes, while preserving the underneath Si in a nonoxidized
form. The GO
x
layer can be switched electrochemically
to reduced graphene oxide, allowing the development of a dynamic material
for molecular electronics technologies. These findings demonstrate
that 2D materials are alternatives to organic self-assembled monolayers
that are typically used to protect and tune the properties of Si and
open a realm of possibilities that combine Si and 2D materials technologies.