Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

Jinesh, Kb Kochupurackal; Tois, E.; Klootwijk, Jh Johan; Wolters, Rpc Robert; Dekkers, Wouter; Kaiser, M.; Bakker, F.; Tuominen, M.; Roozeboom, F.

doi:10.1063/1.2971032

Cited by 10 publications

(4 citation statements)

References 11 publications

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“…These results of the Cp‐alkyl‐alkoxide compounds represent a clear improvement as compared with the Cp‐alkyl and the Cp‐alkoxide compounds. Because (MeCp) 2 Hf(O i Pr)Me and (MeCp) 2 Zr(O t Bu)Me were less thermally stable, it seems that, for this class of Cp‐alkyl‐alkoxide precursors also, short alkoxide chains are preferable for good thermal stability.…”

Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 99%

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Blanquart

Niinistö

Ritala

et al. 2014

Chemical Vapor Deposition

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The atomic layer deposition (ALD) process, an alternative to CVD, is universally appreciated for its unique advantages such as excellent repeatability, conformity, and thickness control at the atomic level. ALD precursor chemistry has mainly been based on homoleptic compounds such as, but not limited to, metal halides, alkylamides, and alkoxides, however these precursors have drawbacks such as possible halide contamination and low thermal stabilities in the case of the alkylamides and alkoxides. Consequently, heteroleptic precursors have been investigated as alternatives to the existing homoleptic counterparts, leading to the development of several advantageous processes. Nevertheless, there is no thematic review dedicated to the heteroleptic precursors and their properties, and it seems that no coherent strategy has been adopted for the development of heteroleptic precursors. This review gives a brief description of ALD and presents studies on the deposition of thin films of groups 4 and 5 metal oxides using ALD. A description of the general ALD properties of homoleptic precursors, in addition to a review on the thermal ALD of groups 4 and 5 metal oxides from heteroleptic precursors, is provided. Trends in the properties of heteroleptic ALD precursors, based on the literature review and recent experimental data, are discussed.

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Section: Ald Of Groups 4 and 5 Oxide Thin Filmsmentioning

confidence: 99%

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Blanquart

Niinistö

Ritala

et al. 2014

Chemical Vapor Deposition

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“…The details of the La y Zr 1−y O x deposition have been reported elsewhere. 5 Typically, a dielectric constant of 35 is obtained for a single La y Zr 1−y O x stack. In situ ALD processed, 50 nm thick TiN electrodes were patterned to create rectangular capacitor structures of 120ϫ 120 um 2 .…”

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confidence: 99%

Maxwell–Wagner instability in bilayer dielectric stacks

Jinesh

Lamy

Klootwijk

et al. 2009

Applied Physics Letters

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Articles you may be interested inCurrent instabilities in rare-earth oxides-HfO 2 gate stacks grown on germanium based metal-oxidesemiconductor devices due to Maxwell-Wagner instabilities and dielectrics relaxation J. Vac. Sci. Technol. B 29, 01AB06 (2011); 10.1116/1.3532946 Direct tunneling stress-induced leakage current in ultrathin Hf O 2 ∕ Si O 2 gate dielectric stacksThe Maxwell-Wagner effect, the enhanced charge migration to the interface of a stack of two dielectrics with different conductances, is shown to cause asymmetric leakage current and electrical breakdown behavior for different electrode polarities. For this purpose, metal-insulator-silicon capacitors were fabricated consisting of bilayered silicon dioxide-lanthanum zirconate dielectric stacks. Maxwell-Wagner instability and Debye polarization can be distinguished upon comparing electron injection from both sides of the stack. The Maxwell-Wagner charges have relaxation times that are nearly five orders of magnitude larger than the Debye polarization, suggesting the long-lasting influence of these trapped charges in nanolaminated dielectric systems.

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“…Possible materials under investigation include conventional HfO 2 and ZrO 2 as mixtures, [1][2][3] also with various rare-earth oxides. 1,[4][5][6][7][8][9][10][11][12][13][14][15][16] Both HfO 2 and ZrO 2 can be stabilized as higher permittivity phases ͑tetragonal and cubic͒ with permittivity above 30. [17][18][19][20][21][22][23] The addition of rare-earth oxides to HfO 2 and ZrO 2 can promote the stabilization of the higher permittivity phases 7 and improve the thermal stability of the resulting films.…”

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confidence: 99%

Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics

Jõgi

Tamm

Kukli

et al. 2010

J. Electrochem. Soc.

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Atomic layer deposition (ALD) of ZrO2–Gd2normalO3 nanolaminates and mixtures was investigated for the preparation of a high permittivity dielectric material. Variation in the relative number of ALD cycles for constituent oxides allowed one to obtain films with controlled composition. Pure ZrO2 films possessed monoclinic and higher permittivity cubic or tetragonal phases, whereas the inclusion of Gd2normalO3 resulted in the disappearance of the monoclinic phase. Changes in phase composition were accompanied with increased permittivity of mixtures and laminates with low Gd content. Further increase in the lower permittivity Gd2normalO3 content above 3.4 cat. % resulted in the decreased permittivity of the mixtures. Leakage currents generally decreased with increasing Gd content, whereby laminated structures demonstrated smaller leakage currents than mixed films at a comparable Gd content. Concerning the bottom electrode materials, the best results in terms of permittivity and leakage currents were achieved with Ru, allowing a capacitance equivalent oxide thickness of ∼1nm and a current density of 3×10−8A/cm2 at 1 V. Charge storage values up to 60nC/mm2 were obtained for mixtures and laminates with thickness below 30 nm. In general, at electric fields below 2–3 MV/cm, normal and trap-compensated Poole–Frenkel conduction mechanisms were competing, whereas at higher fields, Fowler–Nordheim and/or trap-assisted tunneling started to dominate.

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Spontaneous nanoclustering of ZrO2 in atomic layer deposited LayZr1−yOx thin films

Cited by 10 publications

References 11 publications

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors

Maxwell–Wagner instability in bilayer dielectric stacks

Investigation of ZrO[sub 2]–Gd[sub 2]O[sub 3] Based High-k Materials as Capacitor Dielectrics

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