Complex metal oxides, which show a variety of functional properties such as ferromagnetism, ferroelectricity, multi-ferroelectricity, superconductivity, and ionic conduction, have attracted much attention in the past decades. These exotic physical properties arise from a complex hierarchy of competing interactions among spin, charge, orbital, and lattice degrees of freedom. The development of advanced characterization techniques such as electron microscopy, neutron scattering, synchrotron scattering and imaging, spectroscopy at high magnetic fields, and others has enabled us to study the interactions among these degrees of freedom coupled with strain, defect, and interface Vertically aligned nanocomposite thin films with ordered two phases, grown epitaxially on substrates, have attracted tremendous interest in the past decade. These unique nanostructured composite thin films with large vertical interfacial area, controllable vertical lattice strain, and defects provide an intriguing playground, allowing for the manipulation of a variety of functional properties of the materials via the interplay among strain, defect, and interface. This field has evolved from basic growth and characterization to functionality tuning as well as potential applications in energy conversion and information technology. Here, the remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.
Thin FilmsThe ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201803241. 12 11 12where c 11 and c 12 are elastic moduli of the film material. Epitaxial strain gradually changes with film thickness in perovskite manganites. Figure 3 shows reciprocal space mapping or RSM (103) of La 0.7 Ca 0.3 MnO 3 (LCMO) films on STO (001) substrates. It captures the gradual strain relaxation process with increasing film thickness in manganite thin films. When the film is very thin, the interface is coherent with