Spontaneously grown GaN and AlGaN nanowires

Bertness, Kristine A.; Roshko, Alexana; Sanford, Norman A.; Barker, J. M.; Davydov, Albert V.

doi:10.1016/j.jcrysgro.2005.11.079

Cited by 160 publications

(120 citation statements)

References 15 publications

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“…From these results it is evident that NR growth and the related surface processes take place on a silicon nitride surface. For the growth temperature applied here we do not observe the formation of a GaN wetting layer in contrast to earlier works, 6,7 indicating that the sticking coefficient for Ga adatoms on the nitridated Si ͑111͒ surface is low. This be- havior was also described in Ref.…”

Section: A Nucleation Of Undoped Nanorodscontrasting

confidence: 99%

“…4,7 We attribute this behavior to the higher growth temperature. This conclusion is strongly supported by the similarity of In the present study, the nucleation time could be decreased by reduction of the substrate temperature, leading to similar results as in Ref.…”

Section: A Nucleation Of Undoped Nanorodsmentioning

confidence: 89%

“…[6][7][8] Ni nanoparticles have been used as catalysts and the growth of homogeneous NRs has been demonstrated and could be explained based on the vapor-liquidsolid ͑VLS͒ growth model. 9 Catalyst-free growth is possible under nitrogen-rich growth conditions and has been shown to lead to regular columnar growth.…”

Section: Introductionmentioning

confidence: 99%

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Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Furtmayr

Vielemeyer

Stutzmann

et al. 2008

Journal of Applied Physics

142

151

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The self-assembled growth of GaN nanorods on Si ͑111͒ substrates by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions is investigated. An amorphous silicon nitride layer is formed in the initial stage of growth that prevents the formation of a GaN wetting layer. The nucleation time was found to be strongly influenced by the substrate temperature and was more than 30 min for the applied growth conditions. The observed tapering and reduced length of silicon-doped nanorods is explained by enhanced nucleation on nonpolar facets and proves Ga-adatom diffusion on nanorod sidewalls as one contribution to the axial growth. The presence of Mg leads to an increased radial growth rate with a simultaneous decrease of the nanorod length and reduces the nucleation time for high Mg concentrations.

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Section: A Nucleation Of Undoped Nanorodscontrasting

confidence: 99%

Section: A Nucleation Of Undoped Nanorodsmentioning

confidence: 89%

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Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Furtmayr

Vielemeyer

Stutzmann

et al. 2008

Journal of Applied Physics

142

151

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“…9,10,[27][28][29][30] First of all, it was found by many groups that the V/III ratio is a crucial factor for MBE growth of selfassembled GaN nanorods. 9,27,28,31 High V/III ratios are normally used to have separate, high aspect ratio GaN nanorod growth. Figure 5 shows two distinct morphologies of GaN structures grown under N-rich and Ga-rich conditions, reprinted with permission from Ref.…”

Section: B Catalyst-free Gan Nanorod Growthmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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“…The mechanism for the growth of GaN NWs by MBE is still not clear and there are very few investigations 14,15 dealing with growth mechanism. It has been previously postulated that Ga droplets serve as a catalyst in a VLS-type growth mechanism.…”

mentioning

confidence: 99%

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

Debnath¹,

Meijers²,

Richter³

et al. 2007

Applied Physics Letters

224

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GaN nanowires have been grown without external catalyst on Si(111) substrates by plasma-assisted molecular beam epitaxy. Nanowire aspect ratios (length/diameter) of about 250 have been achieved. During the initial stage of the growth, there is a nucleation process in which the number of wires increases and the most probable nucleation diameter of about 10nm has been observed, which slowly increases with deposition time. For deposition time longer than the nucleation stage, the nanowire length as a function of diameter monotonically decreases. This phenomenon can be explained by adatom diffusion on the nanowire lateral surface towards the tip.

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Spontaneously grown GaN and AlGaN nanowires

Cited by 160 publications

References 15 publications

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

GaN based nanorods for solid state lighting

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

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