2003
DOI: 10.1016/j.solmat.2003.05.001
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Spray deposition of CdTe–Te thin films using ethylene-diamine-tetra-acetic acid as a complexing agent in the precursor solution

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Cited by 12 publications
(3 citation statements)
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“…These ions then combine with the Te 2ions present in the solution to form CdTe. The stoichiometry of the deposited films can thus be controlled by varying the concentration of the complexing agent [42]. The role of hydrazine hydride is to reduce Te 4+ ions in TeO 2 to Te 2-.…”
Section: Optical Bandgaps and Film Compositionsmentioning
confidence: 99%
“…These ions then combine with the Te 2ions present in the solution to form CdTe. The stoichiometry of the deposited films can thus be controlled by varying the concentration of the complexing agent [42]. The role of hydrazine hydride is to reduce Te 4+ ions in TeO 2 to Te 2-.…”
Section: Optical Bandgaps and Film Compositionsmentioning
confidence: 99%
“…Generally, EDTA captures metal ions and once it gets saturated in capturing, it releases the metal ions periodically for reaction to get the desired compound. The complex formation with cations leads to control over the reaction chemistry, so that one can easily change the growth mechanism and particularly the stoichiometry of compound semiconductors in a controlled manner [13]. Padmavathy et al [14] observed the enhancement in physical properties of photochemical deposited CdS films by the addition of EDTA.…”
Section: Introductionmentioning
confidence: 99%
“…Due to the high absorption coefficient, only 1-2 µm thickness of CdTe film is required to absorb most of the photons in the solar spectrum on the earth. Up to now, a variety of methods such as evaporation, close spaced sublimation, electrodeposition, sputtering, MOCVD, screen printing, and spray pyrolysis have been reported for the formation of polycrystalline CdTe thin film [2][3][4][5][6][7][8]. Those technologies, however, cause the high production costs due to their requirements of the expensive vacuum systems and high temperature conditions.…”
mentioning
confidence: 99%