Spray-on glass solution for fabrication silicon solar cell emitter layer

Filipowski, Wojciech; Wróbel, E.; Drabczyk, K.; Waczyński, K.; Kulesza-Matlak, G.; Lipiński, M.

doi:10.1108/mi-12-2016-0089

Cited by 11 publications

(7 citation statements)

References 7 publications

(7 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Clear cracks of dopant glass are noticeable. A similar phenomenon was observed for phosphorus-based dopant glass described in Filipowski et al (2017).…”

Section: Resultssupporting

confidence: 83%

Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field

Filipowski

Drabczyk

Wróbel

et al. 2018

Self Cite

View full text Add to dashboard Cite

Purpose The purpose of this paper is to develop a method of preparing spray-on dopant solutions that enable obtaining a p+ region forming a back-surface field (BSF) during the diffusion doping process. The spray-on method used allows to decrease the costs of dopant solution application, which is particularly significant for new low-cost production processes. Design/methodology/approach This paper presents steps of production of high concentration boron dopant solutions enabling diffusion doping of crystalline p-type silicon surfaces. To check the fabricated dopant solutions for stability and suitability for spray-on application, their viscosity and density were measured in week-long intervals. The dopant solutions described in this paper were used in a series of diffusion doping processes to confirm their suitability for BSF production. Findings A method of preparing dopant solutions with parameters enabling depositing them on silicon wafers by the spray-on method has been established. Due to hygroscopic properties of the researched dopant solutions, a maximum surrounding atmosphere humidity has been established. The solutions should not be applied by the spray-on method, if this humidity value is exceeded. The conducted derivatographic examination enabled establishing optimal drying conditions. Originality/value The paper presents a new composition of a dopant solution which contains high concentration of boron and may be applied by the spray-on method. Derivatographic examination results, as well as equations describing the relation between dopant solution density and viscosity and storage time are also original for this research. The established dependencies between the sheet resistance of the fabricated BSF and the diffusion doping time are other new elements described in the paper.

show abstract

“…Clear cracks of dopant glass are noticeable. A similar phenomenon was observed for phosphorus-based dopant glass described in Filipowski et al (2017).…”

Section: Resultssupporting

confidence: 83%

Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field

Filipowski

Drabczyk

Wróbel

et al. 2018

Self Cite

View full text Add to dashboard Cite

show abstract

“…The dopant sources may be used in solar cell production being deposited onto the wafer surface by means of screen-printing [6,7], spray-on method [8,9], or formed from the gaseous phase [10]. The contact between the electrode and the semiconductor may also depend on the type of the dopant source, which should also be taken into account when analyzing the measurement results.…”

Section: Introductionmentioning

confidence: 99%

Correlation of Different Electrical Parameters of Solar Cells with Silver Front Electrodes

2019

View full text Add to dashboard Cite

This work presents comparison results of the selected electrical parameters of silicon solar cells manufactured with silver front electrodes which were co-fired in an infrared belt furnace in the temperature range of 840–960 °C. The commercial paste (PV19B) was used for the metallization process. Electrical properties of a batch of solar cells fabricated in one cycle were investigated. Three methods were used, including measurement of the current-voltage characteristics (I-V), measurement of contacts’ resistivity using the transmission Line model method (TLM), and measurement of contacts’ resistivity using the potential difference method (PD). This work is focused on both the different metallization temperatures of co-firing of solar cells and measurements using the above-mentioned methods. It is shown that the solar cell parameters measured with three methods have different, but strongly correlated values. Moreover, the comparative analysis was performed of the investigations of the same photovoltaic solar cells using both the TLM method and independent research stands (including one non-commercial and two commercial ones) at three different scientific units. In the PD and TLM methods, the same calculation formulae are used. It can be stated, comparing methods I-V, PD, and TLM, that for each, different parameters are determined to assess the electrical properties of the solar cell.

show abstract

“…The process of diffusion doping using phosphorus as the donor dopant is currently the most often used method of crystalline solar cells emitter layer production. Phosphorus sources may be applied onto the plate surface by means of screen-printing (Panek et al , 2003), the spray-on method (Filipowski et al , 2017; Drabczyk et al , 2016) or formed using the gas phase (Li et al , 2017a). The conducted research included the development of a model enabling precise determination of phosphorus concentration profile, on the basis of diffusion process duration and temperature, in monocrystalline silicon for dopant source in the form of a doping paste.…”

Section: Discussionmentioning

confidence: 99%

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Filipowski

2019

Self Cite

View full text Add to dashboard Cite

Purpose The purpose of this paper was the development of a model enabling precise determination of phosphorus concentration profile in the emitter layer of a silicon solar cell on the basis of diffusion doping process duration and temperature. Fick’s second law, which is fundamental for describing the diffusion process, was assumed as the basis for the model. Design/methodology/approach To establish a theoretical model of the process of phosphorus diffusion in silicon, real concentration profiles measured using the secondary ion mass spectrometry (SIMS) method were used. Samples with the phosphorus dopant source applied onto monocrystalline silicon surface were placed in the heat zone of the open quartz tube furnace, where the diffusion process took place in the temperature of 880°C-940°C. The measured real concentration profiles of these samples became template profiles for the model in development. Findings The model was developed based on phenomena described in the literature, such as the influence of the electric field of dopant ionized atoms and the influence of dopant atom concentration nearing the maximum concentration on the value of diffusion coefficient. It was proposed to divide the diffusion area into low and high dopant concentration region. Originality/value A model has been established which enabled obtaining a high level of consistency between the phosphorus concentration profile developed theoretically and the real profile measured using the SIMS method. A coefficient of diffusion of phosphorus in silicon dependent on dopant concentration was calculated. Additionally, a function describing the boundary between the low and high dopant concentration regions was determined.

show abstract

Spray-on glass solution for fabrication silicon solar cell emitter layer

Cited by 11 publications

References 7 publications

Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field

Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field

Correlation of Different Electrical Parameters of Solar Cells with Silver Front Electrodes

Model of phosphorus diffusion in silicon for highly doped solar cell emitter layer

Contact Info

Product

Resources

About