2021
DOI: 10.1016/j.optmat.2021.111153
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Spray pyrolysis deposited Cr and In doped CdS films for laser application

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Cited by 10 publications
(6 citation statements)
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“…The pure CdS sample exhibited a band gap value of E g = 2.45 eV. This value coincides with that reported in the scientific literature. …”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…The pure CdS sample exhibited a band gap value of E g = 2.45 eV. This value coincides with that reported in the scientific literature. …”
Section: Resultssupporting
confidence: 88%
“…Holes in the valence band due to doping and specific treatments affect the conductivity of semiconductors. The presence of chromium as a doping agent in CdS thin films is expected to have positive effects on their properties. Investigations into CdS films doped with chromium (Cr) have been relatively scarce, as indicated in refs –.…”
Section: Introductionmentioning
confidence: 99%
“…Precipitation was carried out in an excess of thiourea relative to the total content of metal cations of 1.8-1. Earlier, in [23], a correlation was found between the precursor solution and deposited film compositions. Accordingly, to obtain doped CdS films with different ligature contents, we changed the concentration of precursors in the initial solution.…”
Section: Producing Samples Techniquementioning
confidence: 84%
“…Samples of zinc selenide doped simultaneously with ions of optically (Cr) and electrically (Al, Na) active impurities were produced as a result of single doping act, and the effect of electrically active impurities on the luminescent and laser characteristics of the obtained structures was also studied. In [23], a correlation was established between the composition of Cr:CdS films and the concentration of optically active Cr 2+ ions in bulk ZnSe samples, that indicates the possibility of using SP technique for producing of laser media with the controlled impurity content and required doping profile.…”
Section: Introductionmentioning
confidence: 92%
“…Such laser sources are in demand in various fields of medicine, highly sensitive spectrum analyzers, remote sensing and atmospheric monitoring, ranging, optical communication systems, and military applications [9,[13][14][15][16][17][18][19]. The traditional methods of dopant (Cr 2+ or Fe 2+ ) introduction into the chalcogenide host matrix are doping during crystal growth (melt growth method [6][7][8][20][21][22], physical or chemical vapor transport technique [23][24][25]) and post-growth high-temperature diffusion doping of single or polycrystals from thin-film metal sources deposited on the sample surface [10,12,[26][27][28][29][30][31][32][33][34]. The latter approach is most commonly used; the matrix is usually a polycrystalline ZnS or ZnSe material synthesized by chemical vapor deposition (CVD).…”
Section: State Of the Art In Zinc Chalcogenide Active Mediamentioning
confidence: 99%