Spray pyrolysis of CuInSe2

Mooney, J. B.; Lamoreaux, R. H.

doi:10.1016/0379-6787(86)90085-2

Cited by 45 publications

(11 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The elemental reference energies are then obtained by solving a set of linear equations, using as input the DFTcalculated total energies of the compounds and the experimental heats of formation. [10][11][12][13][14][15][16][17][18][19][20][21][22][23] The elemental reference energies that are found to minimize the root-mean-square ͑rms͒ deviation from the experimental heats of formation imply corrections up to 1 eV compared to the directly calculated LDA or GGA energies of the respective elements. Further, in compounds containing metals with shallow d states it is often desirable to use the LDA+ U or GGA+ U methodology 24 to correct for residual self-interaction effects within the cation d shell, e.g., in systems containing transition metals, 4,[25][26][27] or when shallow d states couple strongly to the valence band in semiconductors, as is the case in the photovoltaic chalcopyrites CuInSe 2 and CuGaSe 2 , 28 in Cu 2 O, 29,30 or in II-VI semiconductors such as ZnO.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor thermochemistry in density functional calculations

2008

View full text Add to dashboard Cite

The local-density and generalized gradient approximations ͑LDA and GGA͒ to density functional theory ͑DFT͒ exhibit incomplete error cancellation when energy differences are taken between chemically dissimilar systems. This energy inconsistency is manifested, e.g., in the tendency to underestimate the heat ͑enthalpy͒ of formation of semiconducting and insulating compounds in LDA and, even more so, in GGA. Considering a set of 61 compounds that can be formed from 14 elements ͑cations: Cu, Mg, Ca, Zn, Cd, Al, Ga, and In; anions: N, P, As, O, S, and Se͒, optimized elemental reference energies are determined by least-squares error minimization of an overdetermined set of linear equations. These elemental energies are "optimally consistent" with the DFT energies of the semiconductor compounds and imply corrections of up to 1 eV compared to the respective LDA or GGA energies. While these "corrections" are not to be understood to yield the correct absolute total energies of the elements, they are proposed to give appropriate bounds for the chemical potentials for thermodynamic processes in semiconductors and insulators, such as, e.g., defect formation, surface reconstruction, or catalytic processes. The present model allows to evaluate thermodynamic processes using DFT energy differences taken only between systems that are expected to show good error cancellation.

show abstract

Section: Introductionmentioning

confidence: 99%

Semiconductor thermochemistry in density functional calculations

2008

View full text Add to dashboard Cite

show abstract

“…For both ethanol-and butyl-carbitol-based solvents, the component ratio of Cu:In is 9:10. This copper-poor precursor is preferred because its chalcopyrite grain structure has (1,1,2) orientation (Shay et al 1975;Bates et al 1982;Mooney and Radding 1982;Abernathy et al 1984;Bougnot et al 1986;Mooney and Lamoreaux 1986).…”

Section: Methodsmentioning

confidence: 99%

Electrostatic Spray Deposition of Copper–Indium Thin Films

Woo

Min

Yoon

et al. 2011

Aerosol Science and Technology

View full text Add to dashboard Cite

Electrostatic spray deposition is an innovative coating technique that produces fine, uniform, self-dispersive (due to Coulombic repulsion), and highly wettable, atomized droplets. Copper-indium salts are dissolved in an alcohol-based solvent; this precursor is then electrostatically sprayed onto a moderately heated, molybdenum-coated substrate. Precursor flowrates range from 0.02 to 5 mL/h under applied voltages of 1-18 kV, yielding droplet sizes around a few hundred nanometers. Comparing scanning electron microscope images of the coated samples showed that the substrate temperature, applied voltage, and precursor flowrate were the primary parameters controlling coating quality. Also, the most stable electrostatic spray mode that reliably produced uniform and fine droplets was the cone-jet mode with a Taylor cone issuing from the nozzle.

show abstract

“…There are several diversified techniques to fabricate CuInSe 2 (CIS) such as evaporation [5][6][7], sputtering [8][9][10], spray pyrolysis [11,12], chemical method etc. [13][14][15][16][17]. Out of these, expensive vacuum based processes weigh down the economic fabrication.…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of chalcopyrite CuInSe2 nanoparticles

et al. 2014

View full text Add to dashboard Cite

This work presents growth and characterization of copper indium diselenide (CuInSe 2 ) nanoparticles with controllable size synthesized by a simple solvothermal process. Salts of copper(I), indium(III) and selenium powder have been used as starting precursors and ethylenediamine is used as a solvent. Nanoparticles synthesized at different temperatures have been analyzed using X-ray diffraction and transmission electron microscopy. Particle size has been calculated by dynamic light scattering. Surface morphology has also been studied by scanning electron microscopy. Optical properties of CuInSe 2 provide band gap in the range of 0.94-1.05 eV, which are nearly close to optimal intensity for solar radiation suitable for solar cell devices.

show abstract

Spray pyrolysis of CuInSe2

Cited by 45 publications

References 11 publications

Semiconductor thermochemistry in density functional calculations

Semiconductor thermochemistry in density functional calculations

Electrostatic Spray Deposition of Copper–Indium Thin Films

Growth and characterization of chalcopyrite CuInSe2 nanoparticles

Contact Info

Product

Resources

About