Spray-pyrolytically deposited n-CuInSe2/polysulphide photoelectrochemical solar cells

Tembhurkar, Y. D.; Hirde, J. P.

doi:10.1007/bf02757890

Cited by 3 publications

(1 citation statement)

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“…Various techniques such as close-spaced vapour transport (CSVT) (Zouaoui et al 1999), RF sputtering (Parretta et al 1993), co-evaporation (Moharram et al 2001), spray (Tembhurkar and Hirde 1994), molecular beam epitaxy (White et al 1979), electrodeposition (Fahoume et al 1998), chemical bath deposition (Murali 1988), etc. have been adopted for the growth of CuInSe 2 films.…”

Section: Introductionmentioning

confidence: 99%

One-step electrodeposition process of CuInSe2: Deposition time effect

et al. 2014

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CuInSe 2 thin films were prepared by one-step electrodeposition process using a simplified twoelectrodes system. The films were deposited, during 5, 10, 15 and 20 min, from the deionized water solution consisting of CuCl 2, InCl 3 and SeO 2 onto ITO-coated glass substrates. As-deposited films have been annealed under vacuum at 300 °C during 30 min. The structural, optical band gap and electrical resistivity of elaborated films were studied, respectively, using X-ray diffraction (XRD), Raman spectroscopy, UV spectrophotometer and four-point probe method. The micro structural parameters like lattice constants, crystallite size, dislocation density and strain have been evaluated. The XRD investigation proved that the film deposited at 20 min present CuInSe 2 single phase in its chalcopyrite structure and with preferred orientation along (1 1 2) direction, whereas the films deposited at 5, 10 and 15 min show the CuInSe 2 chalcopyrite structure with the In 2 Se 3 as secondary phase. We have found that the formation mechanism of CuInSe 2 depends on the In 2 Se 3 phase. The optical band gap of the films is found to decrease from 1⋅17 to 1⋅04 eV with increase in deposition time. All films show Raman spectra with a dominant A 1 mode at 174 cm-1 , confirming the chalcopyrite crystalline quality of these films. The films exhibited a range of resistivity varying from 2.3 × 10-3 to 4.4 × 10-1 Ω cm.

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Section: Introductionmentioning

confidence: 99%

One-step electrodeposition process of CuInSe2: Deposition time effect

et al. 2014

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n-CuInS2/polysulfide photoelectrochemical solar cells prepared by spray pyrolysis

Tembhurkar¹

1997

Bull Mater Sci

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n CulnS2 photoanode has been prepared by spray pyrolysis onto SnO2 deposited glass substrate at 350°C. The conductivity type of the photoanode was tested by hot-probe method and was of n type. The conductivity of the photoanode was of the order of 2-4f2 lcm ~ and was measured by using four-probe method. The effect of etching (HCI:HNO 3 = 5:1 by volume) on photoanode properties has been studied. The best cell had the following parameters: 1~o = 0.29 V, l c = 5.33 mA/cm 2, if= 0.571 and r/= 1.275%.

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