Sprayed NiO-Doped p-Type Transparent ZnO Thin Films Suitable for Gas-Sensing Devices

Aoun, Yacine; Meneceur, Redha.; Benramache, Said; Maaoui, Bedreddine

doi:10.1134/s1063783420010060

Cited by 7 publications

(7 citation statements)

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“…The calculation of the optical band gap energy is a major factor in determining the electrical conductivity of the thin films, which based on optical transmission. It was calculated from the classical method by the extrapolation of the curve at A = 0 [18], which represented to the drawn of the (Aℎʋ) 2 as a function of hʋ (see Figure 4a) using the following equations [2,5]: where A is the absorbance, d is the film thickness; T is the transmission spectra of thin films; α is the absorption coefficient values; C is a constant, hʋ is the photon energy and Eg the band gap energy of NiO thin films (see Table 2). On the other hand, the disorder in the NiO thin films was characterized by the Urbach energy (Eu) has been calculated by the following expression [19]:…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Nickel oxide NiO is one of the parts of this family of TCO, its good adsorptive properties and chemical stability; it can be deposited onto glass, ceramics, oxides, and substrate materials of other types [1,2]. The semiconductors as oxides metallic are essential compounds for the development of the ultra-high frequencies components, gas sensors, photocatalysis, optoelectronics, lithium-ion microbatteries, enamels and cathode materials for alkaline batteries [2][3][4][5]. Among these, Nickel oxide (NiO) is a semitransparent p-type semiconducting material a large gap direct (3.6-4.0 eV), and has a wide range of applications, such as gas sensors, photocatalysis, dye-sensitized, electrochromic coatings, UV photo-detector, lightweight structural components in the aerospace, in ceramic structures, a counter electrode and anode layer of solid, counter electrodes oxide fuel cells [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Characterization of Physical Properties of the NiO Thin Films by Various Concentrations

Maaoui

Aoun

Benramache

et al. 2020

Advances in Materials Science

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In this work, nickel oxide was deposited on a glass substrate at by spray deposition technique; the structural, optical and electrical properties were studied at different NiO concentrations (0.05, 0.10 and 0.15 mol.l−1). Polycrystalline NiO films with a cubic structure with a strong (111) preferred orientation were observed at all sprayed films with minimum crystallite size of 11.97 nm was attained of deposited film at 0.1 mol.l−1. However, α-Ni(OH)2 was observed at 0.15 mol.l−1. The NiO thin films have good transparency in the visible region, the band gap energy varies from 3.54 to 376 eV was affected by NiO concentration, it is shown that the NiO thin film prepared at 0.05 mol.l−1 has less disorder with few defects. The NiO film deposited at 0.15 mol.l−1 has the electrical conductivity was 0.169 (Ω.cm)−1.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis and Characterization of Physical Properties of the NiO Thin Films by Various Concentrations

Maaoui

Aoun

Benramache

et al. 2020

Advances in Materials Science

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“…All these properties make it the most important transparent conducting oxides [6] (TCO). Several deposition techniques have been widely used to produce TCO films, namely, RF magnetron sputtering [7], molecular beam epitaxy (MBE) [5], reactive thermal evaporation [8], pulsed laser deposition (PLD) [9], chemical vapour deposition [10], electrochemical deposition and spray pyrolysis technique (SPT) [11]. Among these methods, spray pyrolysis has many advantages to allow it to be the most appropriate technique for producing thin films such as simpler and inexpensive one and taking a hand to obtain films with the efficient properties for optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Impact of Deposition Rate on the Structural, Optical, and Electrical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Solar Spray Pyrolysis Method

2021

Nanosistemi, Nanomateriali, Nanotehnologii

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Bedreddine MAAOUI, Yacine AOUN, and Said BENRAMACHE джували за допомогою рентґенівської дифракції (XRD), ультрафіолетової та видимої спектроскопії та чотироточкової зондової методи відповідно. Аналіза властивостей показує, що плівки ZnO є полікристалічними з переважною орієнтацією (002) та кристалізуються у фазі вюртцитового типу. Розмір зерна збільшується до 23 нм, потім зменшується до досягнення 16 нм. Величина забороненої енергетичної зони з прямими переходами зменшується від 3,30 до 3,28 еВ, коли товщина збільшується від 126 до 148 нм. Виявлена електропровідність змінюється залежно від товщини плівки.

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“…It is known that optical properties of semiconductor thin films depend on the deposition method [9,10]. Currently, various methods are used to obtain ZnO thin films: radio frequency (RF) or direct current sputtering, spray pyrolysis, spin coating, metal organic chemical vapor deposition and pulsed laser deposition [5][6][7][9][10][11][12][13][14][15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

Kashuba¹,

Andriyevsky²,

Ільчук³

et al. 2021

J. Nano- Electron. Phys.

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The results of studies of the dispersion of optical functions and optical constants for zinc oxide thin film doped with aluminum are presented. The deposition of Al-doped ZnO (2.5 wt. %) thin films is performed by magnetron sputtering. Al-doped ZnO thin film crystallizes in a hexagonal structure (structure type ZnO, space group P63mc (No. 186) with unit-cell dimensions a  3.226(2) Å and c  5.155(6) Å (V 46.49(6) Å 3 ). Optical transmittance spectra (300-2500 nm) shows that the Al-doped ZnO thin film is of high optical quality, and the value of the optical band gap (3.26 eV) is very close to undoped samples. The study of optical functions is performed on the basis of the experimentally measured transmission spectrum using the bypass method. The spectral behavior of optical functions, such as refractive index, extinction coefficient, absorption index, dielectric functions and optical conductivity, is established. The value of Urbach energy and the dependence of oscillator strength on the size of the band gap and the concentration of doping element are determined. It is observed an increase in Urbach energy for the Al-doped ZnO thin film in comparison to the undoped ones. An almost twofold increase in the optical oscillator strength value is revealed for the thin film studied. The influence of aluminum doping on the dynamic change of optical mobility, optical resistance and relaxation time is established for the first time for the studied compound. The value of the plasma frequency is also determined and its correlation with the carrier density is defined. The doping of ZnO thin films with aluminum leads to an increase in optical mobility, relaxation time and plasma frequency that is revealed by comparison with reference data for the undoped ZnO. Due to good optical properties, this thin film is a good candidate as a material for optoelectronic devices.

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Sprayed NiO-Doped p-Type Transparent ZnO Thin Films Suitable for Gas-Sensing Devices

Cited by 7 publications

References 15 publications

Synthesis and Characterization of Physical Properties of the NiO Thin Films by Various Concentrations

Synthesis and Characterization of Physical Properties of the NiO Thin Films by Various Concentrations

Impact of Deposition Rate on the Structural, Optical, and Electrical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Solar Spray Pyrolysis Method

Optical and Dispersion Parameters of the Al-doped ZnO Thin Film

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