1997
DOI: 10.1016/s0257-8972(97)00047-9
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Sputter and diffusion processes in a plasma immersion device

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Cited by 6 publications
(2 citation statements)
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“…Other evidence of temperature related consequences of thermal spikes can be seen in the longer stopping range in experiments using depth profiling characterization techniques. These techniques include Rutherford backscattering (RBS) [67,68] secondary ion mass spectrometry (SIMS) [69] and the post-diffusion of dopants (or sometimes called radiation-enhanced diffusion) in implanted polymers [70][71][72][73][74]. The conclusion, especially for heavy ions in light substrates, shows that the experimental range parameters exceed significantly the ones proposed by the ZBL theory (estimated by the software TRIM).…”
Section: Experimental and Simulation Examples Of Thermal Spike Effectsmentioning
confidence: 99%
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“…Other evidence of temperature related consequences of thermal spikes can be seen in the longer stopping range in experiments using depth profiling characterization techniques. These techniques include Rutherford backscattering (RBS) [67,68] secondary ion mass spectrometry (SIMS) [69] and the post-diffusion of dopants (or sometimes called radiation-enhanced diffusion) in implanted polymers [70][71][72][73][74]. The conclusion, especially for heavy ions in light substrates, shows that the experimental range parameters exceed significantly the ones proposed by the ZBL theory (estimated by the software TRIM).…”
Section: Experimental and Simulation Examples Of Thermal Spike Effectsmentioning
confidence: 99%
“…This process can lead to appreciable surface erosion and ultimately, the removal of already implanted atoms. It may also leads to surface roughening of the modified surfaces as well as accounts for dose limitation of the implanted ions [71].…”
Section: Sputtering Processmentioning
confidence: 99%